BAT54H datasheet, PDF - EEWORLD Datasheet

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BAT54H: DescriptionSurface Mount Schottky Barrier Diode; CategoryDiscrete semiconductor diode; File Size229KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BAT54H Overview

Surface Mount Schottky Barrier Diode

BAT54H Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.2 W
Maximum repetitive peak reverse voltage	30 V
Maximum reverse recovery time	0.005 µs
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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BAT54H

Elektronische Bauelemente

0.2A, 30V Silicon Hot-Carrier Detector

Surface Mount Schottky Barrier Diode

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low Turn-on Voltage

Extremely Fast Switching Speed

PN Junction Guard Ring for Transient and ESD Protection

H

SOD-323

D

1

Cathode Band

G

MECHANICAL DATA

Case: SOD-323, Molded Plastic

Low Forward Voltage : 0.35 V@ I

F

=10mA

2

F

MARKING

JV

L4

Date Code

C

B

A

E

J

Millimeter

Min.

Max.

1.05 REF.

0.20 REF.

0.80

1.00

0.25

0.40

Millimeter

Min.

Max.

0.080

0.180

1.15

1.45

1.60

1.80

2.30

2.70

REF.

A

B

C

D

REF.

E

F

G

H

PACKAGE INFORMATION

Package

SOD-323

MPQ

3K

LeaderSize

7’ inch

ABSOLUTE MAXIMUM RATINGS

(T

J

= 125°C unless otherwise specified)

Parameter

Reverse Voltage

Forward Current

Peak Repetitive Forward Current

Rated V

R

, Square Wave, 20KHz

Non–Repetitive Peak Forward Current

(t

≦

1.0 s)

Repetitive Peak Forward Current

Thermal Resistance, Junction to Ambient

Power Dissipation

Junction & Storage Temperature

Symbol

V

R

I

F

I

FSM

(1)

I

FSM

(2)

I

FRM

R

θJA

P

D

T

J

, T

STG

Ratings

30

200

400

Unit

V

mA

600

300

635

200

-55~125, -55~150

mA

°C/W

mW

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameters

Reverse Breakdown Voltage

Total Capacitance

Reverse Leakage

Symbol

V

(BR)

C

T

I

R

V

F (1)

V

F (2)

Min.

30

-

Typ.

-

7.6

0.5

0.22

0.29

0.35

0.41

Max.

-

10

2.0

0.24

0.32

0.40

0.50

1.00

5

Unit

V

pF

µA

Test Conditions

I

R

= 10µA

V

R

= 1.0V, f= 1.0MHz

V

R

= 25

I

F

= 0.1mA

I

F

= 1mA

Forward Voltage

V

F (3)

V

F (4)

V

F (5)

V

I

F

= 10mA

I

F

= 30mA

I

F

= 100mA

I

F

=I

R

= 10mA,

I

R(REC)

= 1.0mA

-

0.52

-

Reverse Recovery Time

*Figure 1

Trr

nS

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Dec-2010 Rev. C

Page 1 of 2

BAT54H Related Products

	BAT54H	BAT54H_10
Description	Surface Mount Schottky Barrier Diode	Surface Mount Schottky Barrier Diode

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