BAV99DW
Elektronische Bauelemente
Quad Chips
Surface Mount Switching Diode Array
RoHS Compliant Product
FEATURES
A suffix of "-C" specifies halogen & lead-free
SOT-363
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8
o
0
o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
TOP VIEW
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
75
150
400
Unit
Vdc
mAdc
mAdc
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
200
1.8
R
q
JA
PD
556
250
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BAV99DW= KJG
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100
Ω
1. FR– 5 = 1.0 X 0.75 X 0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
V(BR)
IR
—
—
—
CD
VF
—
—
—
—
trr
—
715
855
1000
1250
4.0
ns
—
30
2.5
50
2
pF
mVdc
75
—
Vdc
µAdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of 2
BAV99DW
Elektronische Bauelemente
Dual Series Chips
Surface Mount Switching Diode
820
Ω
+10 V
2.0 k
100
µH
0.1
µF
DUT
50
Ω
Output
Pulse
Generator
50
Ω
Input
Sampling
Oscilloscopes
VR
Input Signal
90%
IR
I
R(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA;
Measured
at I
R(REC) = 1.0 mA)
IF
0.1
µF
tr
10%
tp
t
IF
trr
t
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
TA = 150°C
IF, Forward
Current (mA)
(mA)
TA = 85°C
10
TA = – 40°C
IR , Reverse
Current
(µA)
1.0
TA = 125°C
0.1
TA = 85°C
1.0
TA = 25°C
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
VF, Forward
Voltage (V)
1.0
1.2
0.001
0
10
20
30
VR, Reverse
Voltage (V)
40
50
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
CD, Diode
Capacitance
(pF)
0.64
0.60
0.56
0.52
0
2
4
VR, Reverse
Voltage (V)
6
8
Figure 4. Capacitance
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
2
of 2
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