BC807-16W_10 datasheet, PDF - EEWORLD Datasheet

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BC807-16W_10: Description500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size187KB，4 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BC807-16W_10 Overview

500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC807-16W_10 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	GREEN, PLASTIC PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	0.3000 W
Transistor type	Universal small signal
Minimum DC amplification factor	250
Rated crossover frequency	80 MHz

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BC807 -16W, -25W, -40W

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

-500 mA, -50 V

PNP Plastic Encapsulate Transistor

FEATURES



SOT-323

Ideally suited for automatic insertion

Epitaxial planar die construction

Complementary to BC817W

Top View

C B

PACKAGE INFORMATION

Weight: 0.0074 g (approximately)

Collector



REF.

Millimeter

Min.

Max.

1.80

2.20

1.80

2.45

1.15

1.35

0.80

1.10

1.20

1.40

0.20

0.40

REF.

Millimeter

Min.

Max.

0.100 REF.

0.525 REF.

0.08

0.25

0.650 TYP.

MARKING

BC807-16W:

BC807-25W:

BC807-40W:

5C,



Base



Emitter

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Junction, Storage Temperature

SYMBOL

CBO

CEO

EBO

, T

STG

RATINGS

-50

-45

-5

-500

200

+150, -55 ~ +150

UNIT

℃

CHARACTERISTICS at Ta = 25°C

SYMBOL

CBO

CEO

EBO

CBO

CEO

EBO

CE(sat)

BE(on)

FE(1)

MIN.

-50

-45

-5

MAX.

-0.1

-0.2

-0.1

-0.7

-1.2

250

400

600

UNIT

TEST CONDITIONS

= -10 uA, I

= 0

= -10 mA, I

= 0

= -1 uA, I

= 0

= -20V, I

= 0

= -20V, I

= 0

= -5V, I

= 0

= -500mA, I

= -50 mA

= -1 V, I

= -500 mA

= -1 V, I

= -100 mA

= -1 V, I

= -500 mA

807-16W

807-25W

807-40W

100

160

250

FE(2)

MHz

= -5 V, I

= -10 mA, f = 100MHz

= -10V, f=1MHz

28-Jul-2010 Rev. F

Page 1 of 3

BC807-16W_10 Related Products

	BC807-16W_10	BC807-16W	BC807-25W	BC807-40W
Description	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Reach Compliance Code	-	compli	compli	compli

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