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2SK1315(S)

Description
Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size30KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SK1315(S) Overview

Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3

2SK1315(S) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)8 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
1 2
1
D
G
2
3
3
1. Gate
2. Drain
3. Source
4. Drain
S

2SK1315(S) Related Products

2SK1315(S) 2SK1315(L) 2SK1316(L) 2SK1316(S)
Description Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3 Power Field-Effect Transistor, 0.7ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3 Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3 Power Field-Effect Transistor, 0.8ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
Parts packaging code TO-252 TO-252 TO-252 TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
Configuration Single Single Single Single
Maximum drain current (Abs) (ID) 8 A 8 A 8 A 8 A
Maximum drain-source on-resistance 0.7 Ω 0.7 Ω 0.8 Ω 0.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
Number of terminals 2 3 3 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 60 W 60 W 60 W 60 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Base Number Matches 1 1 1 1
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