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CPT20010_10

Description
110 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size123KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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CPT20010_10 Overview

110 A, SILICON, RECTIFIER DIODE

CPT20010 & CPT20015
A
R
G
Baseplate
A=Common Anode
A
B
C
E
F
G
H
N
Q
R
U
V
W
Schottky OR'ing PowerMod
Dim. Inches
Min.
B
Millimeters
Min.
Max.
Notes
---
92.20
20.32
17.78
---
16.00
3.30
3.05
12.95
12.45
34.92 BSC
0.25
---
---
---
7.37
6.99
80.01 BSC
---
15.24
8.64
7.92
4.95
4.57
Max.
Q
N
W
Baseplate
Common Cathode
U
C
Baseplate
D=Doubler
F
U
H
V
E
---
3.630
0.700
0.800
---
0.630
0.120
0.130
0.490
0.510
1.375 BSC
0.010
---
---
---
0.275
0.290
3.150 BSC
0.600
---
0.312
0.340
0.180
0.195
1/4-20
Dia.
Dia.
Notes:
Baseplate: Nickel plated
copper
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
200 Amperes/10 to 15 Volts
150°C Junction Temperature
Reverse Energy Tested
ROHS Compliant
Microsemi
Catalog Number
CPT20010*
CPT20015*
Repetitive Peak
Working Peak
Industry
Reverse Voltage Reverse Voltage
Part Number
10V
225CNQ015
15V
10V
15V
*Add Suffix A for Common Anode, D for Doubler
Electrical Characteristics
Average forward current per pkg
Average forward current per leg
Maximum surge current per leg
Maximum repetitive reverse current per leg
Max peak forward voltage per leg
Max peak forward voltage per leg
Max peak reverse current per leg
Max peak reverse current per leg
Typical junction capacitance per leg
l F(AV) 200 Amps
l F(AV) 100 Amps
l FSM 2000 Amps
I R(OV) 2 Amps
V FM .55 Volts
V FM .40 Volts
I RM 3.0 Amps
I RM 10 mA
C J 9200 pF
T C = 125°C, Square wave, R0JC = 0.25°C/W
T C = 125°C, Square wave, R 0JC = 0.5°C/W
8.3ms, half sine, TJ = 150°C
f = 1 KHZ, 25° C, 1µsec square wave
I FM = 200A:T J = 25°C*
I FM = 200A:T J = 150°C*
V RRM,T J = 125°C*
V RRM,T J = 25°C
V R = 5.0V,T J = 25°C
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operation junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center bolt must be torqued first
Weight
T STG
TJ
R0 JC
R0 JC
R0 CS
-55°C to 175°C
-55°C to 150°C
Junction to case
0.5°C/W
0.25°C/W Junction to case
0.08°C/W Case to sink
35-50 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
www.microsemi.com
January, 2010 - Rev. 6

CPT20010_10 Related Products

CPT20010_10 225CNQ015 CPT20010 CPT20015
Description 110 A, SILICON, RECTIFIER DIODE Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 15V V(RRM), Silicon, 110 A, SILICON, RECTIFIER DIODE 110 A, SILICON, RECTIFIER DIODE
Is it Rohs certified? - conform to conform to conform to
Reach Compliance Code - compliant compli compli
ECCN code - EAR99 EAR99 EAR99
application - GENERAL PURPOSE POWER POWER
Shell connection - CATHODE CATHODE CATHODE
Configuration - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials - SILICON SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code - R-XUFM-X2 R-XUFM-X2 R-XUFM-X2
Maximum non-repetitive peak forward current - 2000 A 2000 A 2000 A
Number of components - 2 2 2
Phase - 1 1 1
Number of terminals - 2 2 2
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C
Maximum output current - 100 A 100 A 100 A
Package body material - UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 15 V 10 V 15 V
surface mount - NO NO NO
technology - SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form - UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location - UPPER UPPER UPPER

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