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CPT20015

Description
110 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size123KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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CPT20015 Overview

110 A, SILICON, RECTIFIER DIODE

CPT20015 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-XUFM-X2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresREVERSE ENERGY TESTED
applicationPOWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current2000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current100 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
CPT20010 & CPT20015
A
R
G
Baseplate
A=Common Anode
A
B
C
E
F
G
H
N
Q
R
U
V
W
Schottky OR'ing PowerMod
Dim. Inches
Min.
B
Millimeters
Min.
Max.
Notes
---
92.20
20.32
17.78
---
16.00
3.30
3.05
12.95
12.45
34.92 BSC
0.25
---
---
---
7.37
6.99
80.01 BSC
---
15.24
8.64
7.92
4.95
4.57
Max.
Q
N
W
Baseplate
Common Cathode
U
C
Baseplate
D=Doubler
F
U
H
V
E
---
3.630
0.700
0.800
---
0.630
0.120
0.130
0.490
0.510
1.375 BSC
0.010
---
---
---
0.275
0.290
3.150 BSC
0.600
---
0.312
0.340
0.180
0.195
1/4-20
Dia.
Dia.
Notes:
Baseplate: Nickel plated
copper
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
200 Amperes/10 to 15 Volts
150°C Junction Temperature
Reverse Energy Tested
ROHS Compliant
Microsemi
Catalog Number
CPT20010*
CPT20015*
Repetitive Peak
Working Peak
Industry
Reverse Voltage Reverse Voltage
Part Number
10V
225CNQ015
15V
10V
15V
*Add Suffix A for Common Anode, D for Doubler
Electrical Characteristics
Average forward current per pkg
Average forward current per leg
Maximum surge current per leg
Maximum repetitive reverse current per leg
Max peak forward voltage per leg
Max peak forward voltage per leg
Max peak reverse current per leg
Max peak reverse current per leg
Typical junction capacitance per leg
l F(AV) 200 Amps
l F(AV) 100 Amps
l FSM 2000 Amps
I R(OV) 2 Amps
V FM .55 Volts
V FM .40 Volts
I RM 3.0 Amps
I RM 10 mA
C J 9200 pF
T C = 125°C, Square wave, R0JC = 0.25°C/W
T C = 125°C, Square wave, R 0JC = 0.5°C/W
8.3ms, half sine, TJ = 150°C
f = 1 KHZ, 25° C, 1µsec square wave
I FM = 200A:T J = 25°C*
I FM = 200A:T J = 150°C*
V RRM,T J = 125°C*
V RRM,T J = 25°C
V R = 5.0V,T J = 25°C
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operation junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center bolt must be torqued first
Weight
T STG
TJ
R0 JC
R0 JC
R0 CS
-55°C to 175°C
-55°C to 150°C
Junction to case
0.5°C/W
0.25°C/W Junction to case
0.08°C/W Case to sink
35-50 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
www.microsemi.com
January, 2010 - Rev. 6

CPT20015 Related Products

CPT20015 225CNQ015 CPT20010_10 CPT20010
Description 110 A, SILICON, RECTIFIER DIODE Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 15V V(RRM), Silicon, 110 A, SILICON, RECTIFIER DIODE 110 A, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to - conform to
Reach Compliance Code compli compliant - compli
ECCN code EAR99 EAR99 - EAR99
application POWER GENERAL PURPOSE - POWER
Shell connection CATHODE CATHODE - CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 code R-XUFM-X2 R-XUFM-X2 - R-XUFM-X2
Maximum non-repetitive peak forward current 2000 A 2000 A - 2000 A
Number of components 2 2 - 2
Phase 1 1 - 1
Number of terminals 2 2 - 2
Maximum operating temperature 150 °C 150 °C - 150 °C
Minimum operating temperature -55 °C -55 °C - -55 °C
Maximum output current 100 A 100 A - 100 A
Package body material UNSPECIFIED UNSPECIFIED - UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Certification status Not Qualified Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 15 V 15 V - 10 V
surface mount NO NO - NO
technology SCHOTTKY SCHOTTKY - SCHOTTKY
Terminal form UNSPECIFIED UNSPECIFIED - UNSPECIFIED
Terminal location UPPER UPPER - UPPER
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