DB1507S datasheet, PDF - EEWORLD Datasheet

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DB1507S: Description1.5 Amp Surface Mount Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size160KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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DB1507S Overview

1.5 Amp Surface Mount Bridge Rectifiers

DB1507S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SECOS
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	1000 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

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DB1501S ~ DB1507S

Elektronische Bauelemente

VOLTAGE 50 V ~ 1000 V

1.5 Amp Surface Mount Bridge Rectifiers

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



DB-1S



Low forward voltage drop, high current capability

Rating to 1000V PRV

Ideal for printed circuit board

Reliable low cost construction utilizing molded plastic technique

results in inexpensive products

Lead tin Pb / Sn copper

The plastic material has UL flammability classification 94V-0

MECHANICAL DATA



Polarity: As marked on Body

Weight:0.02 ounces, 0.38 grams

Mounting position: Any

REF.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.

PARAMETERS

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Maximum Average Forward Rectified Current

=40℃

Peak Forward Surge Current 8.3 ms Single Half

Sine-Wave Super Imposed on Rated Load

(JEDEC Method)

Maximum Forward Voltage at 1.5 A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

I t Rating for Fusing (t<8.3ms)

Typical Junction Capacitance Per Element (Note1)

Typical Thermal Resistance (Note2)

Millimeter

Min.

Max.

8.20

8.80

10.0

10.3

7.80

8.50

3.15

3.40

6.20

6.50

REF.

Millimeter

Min.

Max.

5.00

5.20

0.95

1.20

0.20

0.35

1.40

1.60

SYMBOL

1501S

1502S

1503S

1504S

1505S

1506S

1507S

UNIT

℃/W

℃

RRM

RMS

(AV)

FSM

θJA

, T

STG

100

200

140

200

400

280

400

1.5

1.1

500

10.4

-55 ~ 150

600

420

600

800

560

800

1000

700

1000

=25℃

=125℃

Operating and Storage temperature range

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC

2. Thermal resistance from junction to ambient mounted on P.C.B. with 0.5*0.5"(13*13mm) copper pads.

01-Sep-2010 Rev. C

Page 1 of 2

DB1507S Related Products

	DB1507S	DB1501S_10	DB1502S	DB1503S	DB1504S	DB1505S	DB1506S	DB1501S
Description	1.5 Amp Surface Mount Bridge Rectifiers	1.5 Amp Surface Mount Bridge Rectifiers	1.5 Amp Surface Mount Bridge Rectifiers	1.5 Amp Surface Mount Bridge Rectifiers	1.5 Amp Surface Mount Bridge Rectifiers	1.5 Amp Surface Mount Bridge Rectifiers	1.5 Amp Surface Mount Bridge Rectifiers	1.5 Amp Surface Mount Bridge Rectifiers
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SECOS	-	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS
Reach Compliance Code	compli	-	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	1000 V	-	100 V	200 V	400 V	600 V	800 V	50 V
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	-	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak forward current	50 A	-	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	4	-	4	4	4	4	4	4
Phase	1	-	1	1	1	1	1	1
Number of terminals	4	-	4	4	4	4	4	4
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	1.5 A	-	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	1000 V	-	100 V	200 V	400 V	600 V	800 V	50 V
surface mount	YES	-	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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