BSR43TC datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BSR43TC

Preview

BSR43TC: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

Download Datasheet Parametric Compare View All

BSR43TC Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

BSR43TC Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-based maximum capacity	12 pF
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	1000 ns
Maximum opening time (tons)	250 ns
VCEsat-Max	0.5 V

Preview

Download Datasheet

View All

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

COMPLEMENTARY TYPES –

✪

BSR33

BSR43

C

PARTMARKING DETAIL –

AR4

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

TOT

T

j

:T

stg

VALUE

90

80

5

2

1

100

1

-65 to +150

SOT89

UNIT

V

A

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer Ratio

Output Capacitance

Input Capacitance

Transition Frequency

Turn-On Time

Turn-Off Time

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

V

CE(sat)

V

BE(sat)

h

FE

30

100

50

MIN.

90

80

5

100

50

0.25

0.5

1.0

1.2

300

12

90

100

250

1000

pF

MHz

ns

MAX.

UNIT

V

nA

µ

A

V

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA

I

E

=10

µ

A

V

CB

=60V

V

CB

=60V, Tamb =125°C

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

I

C

=100

µ

A, V

CE

=5V

I

C

=100mA, V

CE

=5V

I

C

=500mA, V

CE

=5V

V

CB

=10V, f=1MHz

V

EB

=0.5V, f=1MHz

I

C

=50mA, V

CE

=10V

f =35MHz

V

CC

=20V, I

C

=100mA

I

B1

=I

B2

=5mA

*

C

obo

C

ibo

f

T

on

T

off

*Measured under pulsed conditions.

For typical characteristics graphs see FMMT493 datasheet.

TBA

BSR43TC Related Products

	BSR43TC
Description	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-based maximum capacity	12 pF
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	1000 ns
Maximum opening time (tons)	250 ns
VCEsat-Max	0.5 V

Recommended Resources

Household advance working remote control circuit-receiving circuit

Induction cooker plate temperature and door control tube temperature detection circuit

One of the relay-controlled autotransformer AC stabilized power supply circuits

The autotransformer steps down the voltage and the rotor is added to the excitation starting circuit according to the frequency change.

Micropower LTC221 Quad CMOS Analog Switch with Data Latch

electronic fish trap

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components