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153CMQ080

Description
150 A, SILICON, RECTIFIER DIODE, TO-249
CategoryDiscrete semiconductor    diode   
File Size119KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

153CMQ080 Overview

150 A, SILICON, RECTIFIER DIODE, TO-249

153CMQ080 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresREVERSE ENERGY TESTED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XSFM-T9
Maximum non-repetitive peak forward current1200 A
Number of components2
Phase1
Number of terminals9
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current75 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
FST15380 - FST153100
A
N 4-PLCS.
1
2
3
Common Cathode
C
1
L
P
1.200
9 Pins eq at .150
F
G
J
1
2
3
D=Doubler
K
1
2
3
A=Common Anode
2
3
E
Dim. Inches
Millimeter
Minimum Maximum Minimum Maximum Notes
A
C
E
F
G
H
J
K
L
M
N
P
1.995
0.495
0.990
2.390
1.490
0.120
---
0.240
0.490
0.040
0.175
0.032
2.005
0.506
1.010
2.410
1.510
0.130
0.400
0.260
0.510
.050
0.195
0.052
50.67
12.57
25.15
60.71
37.85
3.05
---
6.10
12.45
1.02
4.45
0.81
50.93
12.83
25.65
61.21
38.35
3.30
10.16
6.60to Lead C
L
12.95
Square
1.27
Dia
4.95
1.32
Schottky Powermod
H
M
Notes:
Baseplate: Nickel plated copper;
electrically isolated
Pins: Nickel plated copper
Industry
Part Number
153CMQ080
153CMQ100
Microsemi
Catalog Number
FST15380*
FST15390*
FST153100*
Working Peak
Repetitive Peak
Reverse Voltage Reverse Voltage
80V
90V
100V
80V
90V
100V
Schottky barrier rectifier
Guard ring for reverse protection
V RRM - 80 to 100 Volts
High surge capacity
Reverse energy tested
Electrically isolated baseplate
*Add the Suffix A for Common Anode, D for Doubler
ROHS Compliant
Electrical Characteristics
IF(AV) 150 Amps
Average forward current per pkg
IF(AV) 75 Amps
Average forward current per leg
IFSM
1200 Amps
Maximum surge current per leg
I
R(OV) 2 Amps
Max repetitive peak reverse current per leg
VFM
.72 Volts
Max peak forward voltage per leg
VFM
.94 Volts
Max peak forward voltage per leg
IRM
20 mA
Max peak reverse current per leg
IRM
1.5 mA
Max peak reverse current per leg
C
Typical junction capacitance per leg
1500 pF
J
TC = 120°C, Square wave, R 0JC = 0.5°C/W
TC = 120°C, Square wave, R 0JC = 1.0°C/W
8.3 ms, half sine T J = 175°C
f = 1 KHz, 25°C, 1µsec Square wave
I FM = 75A: T J = 125°C*
I FM = 75A: T J = 25°C *
VRRM, T J = 125°C *
VRRM, T J = 25°C
VR = 5.0V, T J = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Maximum thermal resistance per leg
Maximum thermal resistance per pkg
Typical thermal resistance (greased)
Mounting torque
Weight
T STG
TJ
R OJC
R OJC
R OCS
-55°C to 175°C
-55°C to 175°C
1.0°C/W
Junction to case
0.5°C/W
Junction to case
0.1°C/W
Case to sink
15 - 20 inch pounds maximum
2.5 ounces (71 grams) typical
www.microsemi.com
January, 2010 - Rev. 2

153CMQ080 Related Products

153CMQ080 153CMQ100 FST15380 FST15390 FST153100 FST15380_10
Description 150 A, SILICON, RECTIFIER DIODE, TO-249 150 A, 100 V, SILICON, RECTIFIER DIODE, TO-249AA 75 A, 80 V, SILICON, RECTIFIER DIODE 75 A, 90 V, SILICON, RECTIFIER DIODE 75 A, 100 V, SILICON, RECTIFIER DIODE 150 A, 100 V, SILICON, RECTIFIER DIODE, TO-249AA
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible -
Reach Compliance Code compliant compliant unknow unknown compliant -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 -
application GENERAL PURPOSE GENERAL PURPOSE POWER POWER GENERAL PURPOSE -
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS -
Diode component materials SILICON SILICON SILICON SILICON SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
JESD-30 code R-XSFM-T9 R-XSFM-T9 R-PSFM-T9 R-PSFM-T9 R-XSFM-T9 -
Maximum non-repetitive peak forward current 1200 A 1200 A 1200 A 1200 A 1200 A -
Number of components 2 2 2 2 2 -
Phase 1 1 1 1 1 -
Number of terminals 9 9 9 9 9 -
Maximum output current 75 A 75 A 75 A 75 A 75 A -
Package body material UNSPECIFIED UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum repetitive peak reverse voltage 80 V 100 V 80 V 90 V 100 V -
surface mount NO NO NO NO NO -
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE -
Base Number Matches 1 1 1 1 1 -

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