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303CNQ080

Description
150 A, 80 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size93KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

303CNQ080 Overview

150 A, 80 V, SILICON, RECTIFIER DIODE

303CNQ080 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionR-XUFM-X2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current2000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current150 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
CPT30080-CPT300100
A
R
G
Baseplate
A=Common Anode
B
Q
N
W
Baseplate
Common Cathode
U
C
H
V
E
Baseplate
D=Doubler
Notes:
Baseplate: Nickel plated
copper
Schottky PowerMod
Dim. Inches
Min.
A
B
C
E
F
G
H
N
Q
R
U
V
W
Millimeters
Min.
Max.
Notes
Max.
F
U
---
3.630
0.700
0.800
---
0.630
0.120
0.130
0.490
0.510
1.375 BSC
0.010
---
---
---
0.275
0.290
3.150 BSC
0.600
---
0.312
0.340
0.180
0.195
---
92.20
20.32
17.78
---
16.00
3.30
3.05
12.95
12.45
34.92 BSC
---
0.25
---
---
7.37
6.99
80.01 BSC
---
15.24
8.64
7.92
4.95
4.57
1/4-20
Dia.
Dia.
Microsemi
Catalog Number
CPT30080*
CPT30090*
CPT300100*
Industry
Part Number
303CNQ080
MBR30080CT
303CNQ0100
MBR300100CT
Repetitive Peak
Working Peak
Reverse Voltage Reverse Voltage
80V
90V
100V
80V
90V
100V
Schottky Barrier Rectifier
Guard Ring Protection
300 Amperes/80 to 100 Volts
175°C Junction Temperature
Reverse Energy Tested
ROHS Compliant
*Add Suffix A for Common Anode, D for Doubler
Electrical Characteristics
I F(AV) 300 Amps
Average forward current per pkg
I F(AV) 150 Amps
Average forward current per leg
I FSM
2000 Amps
Maximum surge current per leg
Maximum repetitive reverse current per leg I R(OV) 2 Amps
VFM
0.98 Volts
Max peak forward voltage per leg
VFM
.86 Volts
Max peak forward voltage per leg
I RM
75 mA
Max peak reverse current per leg
I RM
4.0 mA
Max peak reverse current per leg
CJ
3000 pF
Typical junction capacitance per leg
T C = 112°C, Square wave, R 0JC = 0.20°C/W
T C = 112°C, Square wave, R 0JC = 0.40°C/W
8.3ms, half sine,T J = 175°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 200A: J = 25°C*
T
I FM = 200A: J = 175°C*
T
VRRM, TJ = 125°C*
VRRM, TJ = 25°C
VR = 5.0V,TC = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
T STG
TJ
R OJC
R OJC
R OCS
-55°C to 175°C
-55°C to 175°C
0.40°C/W Junction to case
0.20°C/W Junction to case
0.08°C/W Case to sink
35-40 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
www.microsemi.com
September, 2014 - Rev. 8

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