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80CNQ040A

Description
40 A, 40 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size266KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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80CNQ040A Overview

40 A, 40 V, SILICON, RECTIFIER DIODE

80CNQ040A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresREVERSE ENERGY TESTED
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current800 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current40 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
FST8130 - FST8145
F
A
N 2-PLCS
P
E
L
1
2
3
A=Common Anode
G
K
C
J
H
Note: Baseplate Common with Pin 2
Microsemi
Catalog Number
FST8130*
FST8135*
FST8140*
FST8145*
Industry
Part Number
80CNQ035, A
84CNQ035
80CNQ040, A
84CNQ040
80CNQ045, A
84CNQ045
Working
Peak Reverse
Voltage
30V
35V
40V
45V
Repetitive
Peak Reverse
Voltage
30V
35V
40V
45V
Schottky Barrier Rectifier
Guard Ring Protection
Common Cathode Center Tap
2X40 Amperes avg.
150°C Junction Temperature
Reverse Energy Tested
Low Forward Voltage
ROHS Compliant
1
2
3
D=Doubler
1
2
3
Common Cathode
Dim. Inches
A
C
E
F
G
H
J
K
L
M
N
P
1.180
.027
.350
1.490
.695
.088
.240
.115
.460
.065
.151
.015
1.195
.037
.370
1.510
.715
.098
.260
.135
.480
.085
.161
.025
Millimeter
29.97
0.69
8.89
37.85
17.65
2.24
6.10
2.92
11.68
1.65
3.84
0.38
30.35
0.94
9.40
38.35
18.16
2.49
6.60
3.43
12.19
2.16
4.09
0.64
Minimum Maximum Minimum Maximum Notes
1
2
3
Schottky MiniMod
M
3 PINS eq sp at .200
Dia.
*Add the Suffix A for Common Anode, D for Doubler
Electrical Characteristics
I F(AV) 80 Amps
Average forward current per pkg
I F(AV) 40 Amps
Average forward current per leg
I FSM 800 Amps
Maximum surge current per leg
Max repetitive peak reverse current per leg I R(OV) 2 Amps
VFM 0.47 Volts
Max peak forward voltage per leg
VFM 0.53 Volts
Max peak forward voltage per leg
I RM 500 mA
Max peak reverse current per leg
I RM 3.0 mA
Max peak reverse current per leg
CJ 2100 pF
Typical junction capacitance per leg
TC = 110°C, Square wave, R0JC = 0.5°C/W
T C = 110°C, Square wave, R0JC = 1.0°C/W
8.3 ms, half sine, T J = 150°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 40A: T J = 150°C*
I FM = 40A: T J = 25°C*
VRRM, T J = 125°C*
VRRM, T J = 25°C
VR = 5.0V, T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Mounting Base Torque
Weight
T STG
TJ
R 0JC
R 0JC
R 0CS
-55°C to 175°C
-55°C to 150°C
1.0°C/W
Junction to case
0.5°C/W
Junction to case
0.3°C/W
Case to sink
10 inch pounds maximum
0.3 ounce (8.4 grams) typical
www.microsemi.com
October, 2012 - Rev. 5
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