82CNQ030A datasheet, PDF - EEWORLD Datasheet

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82CNQ030A: Description40 A, 30 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size119KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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82CNQ030A Overview

40 A, 30 V, SILICON, RECTIFIER DIODE

82CNQ030A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	REVERSE ENERGY TESTED
application	GENERAL PURPOSE
Shell connection	ANODE
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-XSFM-T3
JESD-609 code	e0
Maximum non-repetitive peak forward current	800 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	40 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
surface mount	NO
technology	SCHOTTKY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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Schottky MiniMod

FST8230

Dim. Inches

1

2

3

Common Cathode

A

C

E

F

G

H

J

K

L

M

N

P

1.180

.027

.350

1.490

.695

.088

.240

.115

.460

.065

.151

.015

F

A

N, 2-PLCS.

P

1

2

3

Millimeter

1.195

.037

.370

1.510

.715

.098

.260

.135

.480

.085

.161

.025

29.97

0.69

8.89

37.85

17.65

2.24

6.10

2.92

11.68

1.65

3.84

0.38

30.35

0.94

9.40

38.35

18.16

2.49

6.60

3.43

12.19

2.16

4.09

0.64

Minimum Maximum Minimum Maximum Notes

E

L

M

3 PINS eq sp at .200

C

G

J

H

Note: Baseplate Common with Pin 2

1

2

3

A=Common Anode

K

1

2

3

D=Doubler

Dia.

Microsemi

Catalog Number

FST8230*

Industry

Part Number

82CNQ030, A

Working

Peak Reverse

Voltage

30V

Repetitive

Peak Reverse

Voltage

30V

Schottky Barrier Rectifier

Guard Ring Protection

2X40 Amperes avg.

150°C Junction Temperature

Reverse Energy Tested

Low Forward Voltage

ROHS Compliant

*Add the Suffix A for Common Anode, D for Doubler

Electrical Characteristics

I F(AV) 80 Amps

Average forward current per pkg

I F(AV) 40 Amps

Average forward current per leg

I FSM 800 Amps

Maximum surge current per leg

Max repetitive peak reverse current per leg I R(OV) 2 Amps

VFM 0.42 Volts

Max peak forward voltage per leg

VFM 0.47 Volts

Max peak forward voltage per leg

I RM 300 mA

Max peak reverse current per leg

I RM 5 mA

Max peak reverse current per leg

I RM 3 mA

Typical reverse current per leg

CJ 2400 pF

Typical junction capacitance per leg

TC = 115°C, Square wave, R0JC = 0.5°C/W

T C = 115°C, Square wave, R0JC = 1.0°C/W

8.3 ms, half sine, T J = 150°C

f = 1 KHZ, 25°C, 1µsec square wave

I FM = 40A: T J = 150°C*

I FM = 40A: T J = 25°C*

VRRM, T J = 125°C*

VRRM, T J = 25°C

VR = 5.0V, T C = 25°C

*Pulse test: Pulse width 300µsec, Duty cycle 2%

Thermal and Mechanical Characteristics

Storage temp range

Operating junction temp range

Max thermal resistance per leg

Max thermal resistance per pkg.

Typical thermal resistance (greased)

Mounting Base Torque

Weight

T STG

TJ

R 0JC

R 0CS

-55°C to 175°C

-55°C to 150°C

1.0°C/W

Junction to case

0.5°C/W

Junction to case

Case to sink

0.3°C/W

10 inch pounds maximum

0.3 ounce (8.4 grams) typical

www.microsemi.com

January, 2010 - Rev. 6

82CNQ030A Related Products

	82CNQ030A	82CNQ030	FST8230_10	FST8230
Description	40 A, 30 V, SILICON, RECTIFIER DIODE	80 A, 30 V, SILICON, RECTIFIER DIODE	40 A, 30 V, SILICON, RECTIFIER DIODE	40 A, 30 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	incompatible	conform to	-	conform to
Maker	Microsemi	Microsemi	-	Microsemi
Reach Compliance Code	compliant	compliant	-	compli
ECCN code	EAR99	EAR99	-	EAR99
Other features	REVERSE ENERGY TESTED	REVERSE ENERGY TESTED	-	REVERSE ENERGY TESTED
application	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE
Shell connection	ANODE	CATHODE	-	CATHODE
Configuration	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
JESD-30 code	R-XSFM-T3	R-XSFM-T3	-	R-XSFM-T3
Maximum non-repetitive peak forward current	800 A	800 A	-	800 A
Number of components	2	2	-	2
Phase	1	1	-	1
Number of terminals	3	3	-	3
Maximum operating temperature	150 °C	150 °C	-	150 °C
Minimum operating temperature	-55 °C	-55 °C	-	-55 °C
Maximum output current	40 A	40 A	-	40 A
Package body material	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	-	Not Qualified
Maximum repetitive peak reverse voltage	30 V	30 V	-	30 V
surface mount	NO	NO	-	NO
technology	SCHOTTKY	SCHOTTKY	-	SCHOTTKY
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	-	SINGLE

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