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FST8230_10

Description
40 A, 30 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size119KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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FST8230_10 Overview

40 A, 30 V, SILICON, RECTIFIER DIODE

Schottky MiniMod
FST8230
Dim. Inches
1
2
3
Common Cathode
A
C
E
F
G
H
J
K
L
M
N
P
1.180
.027
.350
1.490
.695
.088
.240
.115
.460
.065
.151
.015
F
A
N, 2-PLCS.
P
1
2
3
Millimeter
1.195
.037
.370
1.510
.715
.098
.260
.135
.480
.085
.161
.025
29.97
0.69
8.89
37.85
17.65
2.24
6.10
2.92
11.68
1.65
3.84
0.38
30.35
0.94
9.40
38.35
18.16
2.49
6.60
3.43
12.19
2.16
4.09
0.64
Minimum Maximum Minimum Maximum Notes
E
L
M
3 PINS eq sp at .200
C
G
J
H
Note: Baseplate Common with Pin 2
1
2
3
A=Common Anode
K
1
2
3
D=Doubler
Dia.
Microsemi
Catalog Number
FST8230*
Industry
Part Number
82CNQ030, A
Working
Peak Reverse
Voltage
30V
Repetitive
Peak Reverse
Voltage
30V
Schottky Barrier Rectifier
Guard Ring Protection
2X40 Amperes avg.
150°C Junction Temperature
Reverse Energy Tested
Low Forward Voltage
ROHS Compliant
*Add the Suffix A for Common Anode, D for Doubler
Electrical Characteristics
I F(AV) 80 Amps
Average forward current per pkg
I F(AV) 40 Amps
Average forward current per leg
I FSM 800 Amps
Maximum surge current per leg
Max repetitive peak reverse current per leg I R(OV) 2 Amps
VFM 0.42 Volts
Max peak forward voltage per leg
VFM 0.47 Volts
Max peak forward voltage per leg
I RM 300 mA
Max peak reverse current per leg
I RM 5 mA
Max peak reverse current per leg
I RM 3 mA
Typical reverse current per leg
CJ 2400 pF
Typical junction capacitance per leg
TC = 115°C, Square wave, R0JC = 0.5°C/W
T C = 115°C, Square wave, R0JC = 1.0°C/W
8.3 ms, half sine, T J = 150°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 40A: T J = 150°C*
I FM = 40A: T J = 25°C*
VRRM, T J = 125°C*
VRRM, T J = 25°C
VRRM, T J = 25°C
VR = 5.0V, T C = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg.
Typical thermal resistance (greased)
Mounting Base Torque
Weight
T STG
TJ
R 0JC
R 0JC
R 0CS
-55°C to 175°C
-55°C to 150°C
1.0°C/W
Junction to case
0.5°C/W
Junction to case
Case to sink
0.3°C/W
10 inch pounds maximum
0.3 ounce (8.4 grams) typical
www.microsemi.com
January, 2010 - Rev. 6

FST8230_10 Related Products

FST8230_10 82CNQ030A 82CNQ030 FST8230
Description 40 A, 30 V, SILICON, RECTIFIER DIODE 40 A, 30 V, SILICON, RECTIFIER DIODE 80 A, 30 V, SILICON, RECTIFIER DIODE 40 A, 30 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? - incompatible conform to conform to
Maker - Microsemi Microsemi Microsemi
Reach Compliance Code - compliant compliant compli
ECCN code - EAR99 EAR99 EAR99
Other features - REVERSE ENERGY TESTED REVERSE ENERGY TESTED REVERSE ENERGY TESTED
application - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection - ANODE CATHODE CATHODE
Configuration - COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials - SILICON SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code - R-XSFM-T3 R-XSFM-T3 R-XSFM-T3
Maximum non-repetitive peak forward current - 800 A 800 A 800 A
Number of components - 2 2 2
Phase - 1 1 1
Number of terminals - 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C
Maximum output current - 40 A 40 A 40 A
Package body material - UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 30 V 30 V 30 V
surface mount - NO NO NO
technology - SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE

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