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CPT30230_10

Description
150 A, 30 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size123KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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CPT30230_10 Overview

150 A, 30 V, SILICON, RECTIFIER DIODE

Schottky Powermod
CPT30230
Min.
B
Baseplate
A=Common Anode
A
B
C
E
F
G
H
N
Q
R
U
V
W
A
R
G
Dim. Inches
Max.
Millimeters
Min.
Max.
Notes
---
92.20
17.78
20.32
---
16.00
3.30
3.05
12.45
12.95
34.92 BSC
0.25
---
---
---
6.99
7.37
80.01 BSC
15.24
---
7.92
8.64
4.57
4.95
Q
N
W
Baseplate
Common Cathode
U
C
Baseplate
D=Doubler
F
U
H
V
E
---
3.630
0.800
0.700
0.630
---
0.130
0.120
0.510
0.490
1.375 BSC
---
0.010
---
---
0.275
0.290
3.150 BSC
0.600
---
0.312
0.340
0.180
0.195
1/4-20
Dia.
Dia.
Notes:
Baseplate: Nickel plated
copper
Schottky Barrier Rectifier
Guard Ring Protection
Low Power Loss
150°C Junction Temperature
300 Amperes/30 Volts
Reverse Energy Tested
Repetitive Peak
Working Peak
Microsemi
Industry
Reverse Voltage Reverse Voltage
Catalog Number Part Number
CPT30230*
MBRP20030CTL
30V
30V
*Add Suffix A for Common Anode, D for Doubler
ROHS Compliant
Electrical Characteristics
Average forward current per package
Average forward current per leg
Maximum surge current per leg
Maximum repetitive reverse current per leg
Max peak forward voltage per leg
Max peak reverse current per leg
Max peak reverse current per leg
Typical junction capacitance per leg
l F(AV) 300 Amps
l F(AV) 150 Amps
l FSM 2500 Amps
I R(OV) 2 Amps
V FM .55 Volts
I RM 1.5 Amps
I RM 10 mA
C J 4900 pF
T C = 103°C, square wave, R 0JC = 0.2°C/W
T C = 103°C, square wave, R0JC = 0.4°C/W
8.3ms, half sine, TJ = 150°C
f = 1 KHz, 1µsec square wave, TJ = 25°C
I FM = 150A: TJ = 25°C*
V RRM,T J = 125°C
V RRM,T J = 25°C
V R = 5V, TJ = 25°C, f = 1MHz
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operation junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center bolt must be torqued first
Weight
T STG
TJ
R0 JC
R0 JC
R0 CS
-55°C to 175°C
-55°C to 150°C
Junction to case
0.4°C/W
Junction to case
0.2°C/W
0.08°C/W Case to sink
35-50 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
www.microsemi.com
January, 2010 - Rev. 5

CPT30230_10 Related Products

CPT30230_10 CPT30230 MBRP20030CTL
Description 150 A, 30 V, SILICON, RECTIFIER DIODE 150 A, 30 V, SILICON, RECTIFIER DIODE Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 30V V(RRM), Silicon,
Is it Rohs certified? - incompatible conform to
Contacts - 2 2
Reach Compliance Code - unknow compliant
ECCN code - EAR99 EAR99
Other features - LOW POWER LOSS LOW POWER LOSS
application - GENERAL PURPOSE GENERAL PURPOSE
Shell connection - CATHODE CATHODE
Configuration - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials - SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code - R-XUFM-X2 R-XUFM-X2
Maximum non-repetitive peak forward current - 2500 A 2500 A
Number of components - 2 2
Phase - 1 1
Number of terminals - 2 2
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C
Maximum output current - 150 A 150 A
Package body material - UNSPECIFIED UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 30 V 30 V
surface mount - NO NO
technology - SCHOTTKY SCHOTTKY
Terminal form - UNSPECIFIED UNSPECIFIED
Terminal location - UPPER UPPER
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED

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