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MBR20060CT

Description
150 A, 60 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size269KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MBR20060CT Overview

150 A, 60 V, SILICON, RECTIFIER DIODE

MBR20060CT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-XUFM-X2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresREVERSE ENERGY TESTED
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current2000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current150 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky PowerMod
CPT30060
Baseplate
A=Common Anode
B
A
R
G
Dim. Inches
Min.
A
B
C
E
F
G
H
N
Q
R
U
V
W
Millimeters
Min.
Max.
Notes
Max.
Q
N
W
Baseplate
Common Cathode
U
C
F
U
H
V
E
Baseplate
D=Doubler
Notes:
Baseplate: Nickel plated
copper
---
3.630
0.800
0.700
0.630
---
0.130
0.120
0.510
0.490
1.375 BSC
---
0.010
---
---
0.290
0.275
3.150 BSC
0.600
---
0.312
.340
0.180
0.195
---
92.20
17.78
20.32
---
16.00
3.30
3.05
12.45
12.95
34.92 BSC
---
0.25
---
---
6.99
7.37
80.01 BSC
15.24
---
7.92
8.64
4.57
4.95
1/4-20
Dia.
Dia.
Microsemi
Catalog Number
CPT30060*
Industry
Part Number
MBRP20060CT
MBRP30060CT
MBR20060CT
MBR30060CT
Working Peak
Repetitive Peak
Reverse Voltage Reverse Voltage
60V
60V
Schottky Barrier Rectifier
Guard Ring Protection
300 Amperes/60 Volts
175°C Junction Temperature
Reverse Energy Tested
ROHS Compliant
*Add Suffix A for Common Anode, D for Doubler
Electrical Characteristics
I F(AV) 300 Amps
Average forward current per pkg
I F(AV) 150 Amps
Average forward current per leg
I FSM
2000 Amps
Maximum surge current per leg
Maximum repetitive reverse current per leg I R(OV) 2 Amps
VFM
.82 Volts
Max peak forward voltage per leg
VFM
.68 Volts
Max peak forward voltage per leg
I RM
75 mA
Max peak reverse current per leg
I RM
Max peak reverse current per leg
4.0 mA
CJ
Typical junction capacitance per leg
4300 pF
TC = 127°C, Square wave, R 0JC = 0.20°C/W
T C = 127°C, Square wave, R 0JC = 0.40°C/W
8.3ms, half sine,T J = 175°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 200A: J = 25°C*
T
I FM = 200A: J = 175°C*
T
VRRM, TJ = 125°C*
VRRM, TJ = 25°C
VR = 5.0V,TC = 25°C
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
T STG
TJ
R OJC
R OJC
R OCS
-55°C to 175°C
-55°C to 175°C
0.40°C/W Junction to case
0.20°C/W Junction to case
0.08°C/W Case to sink
35-50 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
www.microsemi.com
October, 2012 - Rev. 7

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Description 150 A, 60 V, SILICON, RECTIFIER DIODE 150 A, 60 V, SILICON, RECTIFIER DIODE 150 A, 60 V, SILICON, RECTIFIER DIODE 150 A, 60 V, SILICON, RECTIFIER DIODE 150 A, 60 V, SILICON, RECTIFIER DIODE 150 A, 60 V, SILICON, RECTIFIER DIODE DIODE MODULE 60V TO244AB
Is it Rohs certified? conform to incompatible - conform to conform to conform to incompatible
Maker Microsemi Microsemi - Microsemi Microsemi - Microsemi
package instruction R-XUFM-X2 PACKAGE-2 - R-XUFM-X2 - - PACKAGE-2
Contacts 2 2 - 2 2 2 2
Reach Compliance Code compli unknown - compliant compliant compli unknown
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99
Other features REVERSE ENERGY TESTED - - REVERSE ENERGY TESTED REVERSE ENERGY TESTED REVERSE ENERGY TESTED -
application GENERAL PURPOSE POWER - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE POWER
Shell connection CATHODE CATHODE - CATHODE CATHODE CATHODE ANODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON - SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XUFM-X2 R-XUFM-X2 - R-XUFM-X2 R-XUFM-X2 R-XUFM-X2 R-XUFM-X2
Maximum non-repetitive peak forward current 2000 A 2000 A - 2000 A 2000 A 2000 A 2000 A
Number of components 2 2 - 2 2 2 2
Phase 1 1 - 1 1 1 1
Number of terminals 2 2 - 2 2 2 2
Maximum operating temperature 175 °C 175 °C - 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C - -55 °C -55 °C -55 °C -55 °C
Maximum output current 150 A 150 A - 150 A 150 A 150 A 150 A
Package body material UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 60 V 60 V - 60 V 60 V 60 V 60 V
surface mount NO NO - NO NO NO NO
technology SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER - UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Base Number Matches - 1 - 1 1 1 1
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