RN1116FV datasheet, PDF - EEWORLD Datasheet

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RN1116FV: DescriptionTRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size548KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1116FV Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal

RN1116FV Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 2.12
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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RN1114FV∼RN1118FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114FV, RN1115FV, RN1116FV, RN1117FV, RN1118FV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Built-in bias resistors

Simplified circuit design

0.22 ± 0.05

Unit in mm

1.2 ± 0.05

Reduced quantity of parts and manufacturing process

Complementary to RN2114FV~RN2118FV

0.8 ± 0.05

1.2 ± 0.05

0.4

0.13 ± 0.05

Equivalent Circuit and Bias Resistor Values

Type No.

RN1114FV

RN1115FV

RN1116FV

RN1117FV

RN1118FV

R1 (kΩ)

2.2

4.7

R2 (kΩ)

4.7

0.5 ± 0.05

VESM

1.BASE

2.EMITTER

3.COLLECTOR

JEDEC

JEITA

TOSHIBA

Weight: 0.0015 g (typ.)

―

2-1L1A

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN1114FV~1118FV

RN1114FV

RN1115FV

Emitter-base voltage

RN1116FV

RN1117FV

RN1118FV

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1114FV~1118FV

(Note)

stg

EBO

Symbol

CBO

CEO

Rating

100

150

−55~150

Unit

0.5mm

0.45mm

0.4mm

°C

Note: Mounted on FR4 board

(25.4

25.4 mm

1.6 mmt)

2004-06-28

0.32 ± 0.05

0.80 ± 0.05

RN1116FV Related Products

	RN1116FV	RN1117FV	RN1115FV	RN1118FV	RN1114FV
Description	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 2.12	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 4.54	BUILT-IN BIAS RESISTOR RATIO IS 0.21	BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50	30	50	50	50
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	0.15 W	0.15 W	0.15 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Maker	Toshiba Semiconductor	-	-	Toshiba Semiconductor	Toshiba Semiconductor

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