Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1 ms
T
vj
= 25° C
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
V
CES
I
C,nom.
I
C
I
CRM
1200
50
115
100
V
A
A
A
T
C
=25°C, Transistor
P
tot
460
W
V
GES
+/- 20V
V
I
F
50
A
I
FRM
100
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I t
2
430
A s
2
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 50A, V
GE
= 15V, T
vj
= 25°C
I
C
= 50A, V
GE
= 15V, T
vj
= 125°C
I
C
= 2mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
V
CE sat
min.
-
-
4,5
typ.
2,1
2,4
5,5
max.
2,6
2,9
6,5
V
V
V
V
GE
= -15V...+15V
Q
G
-
0,53
-
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
3,3
-
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
0,21
-
nF
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
-
5
mA
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: MOD-D2, Mark Münzer
approved by: SM TM; Wilhelm Rusche
date of publication: 2003-01-10
revision: 3.0
1(8)
DB_BSM50GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 50A, V
CE
= 600V
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 50A, V
CE
= 600V
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 125°C
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 50A, V
CE
= 600V
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 50A, V
CE
= 600V
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 15Ω, T
vj
= 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
T
C
=25°C
I
C
= 50A, V
CE
= 600V, V
GE
= ±15V
R
G
= 15Ω, T
vj
= 125°C, L
σ
= 120nH
I
C
= 50A, V
CE
= 600V, V
GE
= 15V
R
G
= 15Ω, T
vj
= 125°C, L
σ
= 120nH
t
P
≤
10µs, V
GE
≤
15V, R
G
= 15Ω
T
Vj
≤125°C,
V
CC
=900V, V
CEmax
=V
CES
-L
σCE
·di/dt
I
SC
L
σCE
-
-
400
40
-
-
A
nH
E
off
-
6,2
-
mJ
E
on
-
6,4
-
mJ
t
f
-
-
0,03
0,07
-
-
µs
µs
t
d,off
-
-
0,25
0,30
-
-
µs
µs
t
r
-
-
0,05
0,05
-
-
µs
µs
t
d,on
-
-
0,05
0,06
-
-
µs
µs
min.
typ.
max.
R
CC‘+EE‘
-
1,0
-
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
I
F
= 50A, V
GE
= 0V, T
vj
= 25°C
I
F
= 50A, V
GE
= 0V, T
vj
= 125°C
I
F
= 50A, - di
F
/dt = 1300A/µs
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Sperrverzögerungsladung
recovered charge
I
F
= 50A, - di
F
/dt = 1300A/µs
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 50A, - di
F
/dt = 1300A/µs
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
E
rec
-
-
1,9
4
-
-
mJ
mJ
Q
r
-
-
5,1
10,7
-
-
µC
µC
I
RM
-
-
52
66
-
-
A
A
V
F
min.
-
-
typ.
1,8
1,7
max.
2,3
2,2
V
V
2(8)
DB_BSM50GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
λ
Παστε
= 1 W/m * K /
λ
grease
= 1 W/m * K
R
thCK
R
thJC
-
-
-
typ.
-
-
0,05
max.
0,27
0,60
-
K/W
K/W
K/W
T
vj max
-
-
150
°C
T
vj op
-40
-
125
°C
T
stg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance distance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
Schraube / screw M6
M
3,0
Al
2
O
3
20
mm
11
mm
275
-
6,0
Nm
Anschlüsse / terminals M5
M
2,5
-
5,0
Nm
G
250
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
DB_BSM50GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Ausgangskennlinie (typisch)
Output characteristic (typical)
I
C
= f (V
CE
)
V
GE
= 15V
100
90
80
70
Tvj = 25°C
Tvj = 125°C
I
C
[A]
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE
[V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
100
90
80
70
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
VGE = 7V
I
C
= f (V
CE
)
T
vj
= 125°C
I
C
[A]
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
4(8)
DB_BSM50GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
I
C
= f (V
GE
)
V
CE
= 20V
100
90
80
70
Tvj = 25°C
Tvj = 125°C
I
C
[A]
60
50
40
30
20
10
0
5
6
7
8
9
10
11
12
V
GE
[V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
100
90
80
70
Tvj = 25°C
Tvj = 125°C
I
F
= f (V
F
)
I
F
[A]
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
F
[V]
5(8)
DB_BSM50GB120DLC_3.0
2003-01-10
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