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MPP4201_09

Description
50 V, SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size152KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

MPP4201_09 Overview

50 V, SILICON, PIN DIODE

MPP4201_09 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Minimum breakdown voltage50 V
stateACTIVE
packaging shapeRectangle
Package SizeChipCARRIER
surface mountYes
Terminal formNO
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsUNSPECIFIED
CraftsmanshipPOSITIVE-INTRINSIC-负
structuresingle
Diode component materialssilicon
Diode typePIN diode
applicationattenuator; switch
frequency band×band
Maximum diode capacitance0.1000 pF
Maximum diode forward resistance3 ohm
Minority Carrier Lifetime Rating0.0500 us
MPP4201 – MPP4205, MPL4700
TM
®
CONTROL DEVICES – MMSM PIN and Limiter Diodes
RoHS Compliant
DESCRIPTION
KEY FEATURES
Up to 10W incident RF power
handling
Low parasitics
L
P
= 0.02nH Typical
C
P
= 0.04pF Typical
Broadband Performance through
X-Band
Available on Tape & Reel or on
Film Frame for pick & place
Small, SOD 323 Footprint
RoHS Compliant
1
This series of surface mount PIN and Limiter diodes utilize new and unique
monolithic MMSM technology. The technology is a package/device
integration accomplished at the wafer fabrication level. Since the cathode
and anode interconnections utilize precision photolithographic techniques
rather than wire bonds, parasitic package inductance is tightly controlled.
The package parasitics provide smooth non-resonant functionality through
X Band. This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
www.MICROSEMI.com
APPLICATIONS
The MPP4000 series of PIN diodes can be used in RF circuits as an on/off
element, as a switch, or as a current controlled resistor in attenuators
extending over the frequency range from UHF through X band. Switch
applications include high speed switches (ECM systems), TR switches
channel or antenna selection switches (Telcom and WLAN applications),
duplexers (radar) and digital phase shifters (phased arrays). These diodes
are also used as passive and active limiters for low to moderate RF power
levels. Attenuator type applications include amplitude modulators, AGC
attenuators and power levelers.
The MPL4700 / MPL4701 series of Limiter diodes are design for low to
medium power receiver protection. The typical leakage output power for the
MPL4701 is +20 dbm versus +24 dbm for the MPL4700.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Leakage Current
@80% of minimum Rated V
B
Operating Temperature
Storage Temperature
Symbol
I
R
T
OP
T
STG
Value
0.5
-55 to +150
-65 to +150
Unit
uA
ºC
ºC
1-
These devices are supplied with
gold terminations.
APPLICATIONS/BENEFITS
Receiver protection circuits
Broadband Switching
Economy Switching
RF Attenuators
IMPORTANT:
For the most current data, visit:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
MPP4200, MPL4700
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1

MPP4201_09 Related Products

MPP4201_09 MPP4201 MPL4700 MPP4202 MPP4204 MPL4701 MPP4203 MPP4205
Description 50 V, SILICON, PIN DIODE Pin Diode, 70V V(BR), Silicon, 50 V, SILICON, PIN DIODE 50 V, SILICON, PIN DIODE Pin Diode, 25V V(BR), Silicon, 50 V, SILICON, PIN DIODE Pin Diode, 50V V(BR), Silicon, 70 V, SILICON, PIN DIODE
Number of terminals 2 2 2 2 2 2 2 2
Number of components 1 1 1 1 1 1 1 1
Minimum breakdown voltage 50 V 70 V 25 V 50 V 25 V 50 V 50 V 70 V
surface mount Yes YES YES YES YES Yes YES YES
Terminal form NO NO LEAD NO LEAD NO LEAD NO LEAD NO NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Diode component materials silicon SILICON SILICON SILICON SILICON silicon SILICON SILICON
Diode type PIN diode PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN diode PIN DIODE PIN DIODE
frequency band ×band X BAND X BAND X BAND X BAND ×band X BAND X BAND
Maximum diode capacitance 0.1000 pF 0.2 pF 0.15 pF 0.15 pF 0.15 pF 0.1000 pF 0.1 pF 0.15 pF
Maximum diode forward resistance 3 ohm 2.5 Ω 2 Ω 2.8 Ω 2 Ω 3 ohm 3 Ω 5 Ω
application attenuator; switch SWITCHING - - SWITCHING attenuator; switch ATTENUATOR; SWITCHING ATTENUATOR
package instruction - R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 - R-XBCC-N2 R-XBCC-N2
Reach Compliance Code - compliant compli compli compliant - compliant compli
ECCN code - EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
Configuration - SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
JESD-30 code - R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 - R-XBCC-N2 R-XBCC-N2
Minority carrier nominal lifetime - 0.15 µs 0.01 µs 0.05 µs 0.03 µs - 0.05 µs 0.15 µs
Package body material - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER - CHIP CARRIER CHIP CARRIER
technology - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
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