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2SC4126MI-TL

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4
CategoryDiscrete semiconductor    The transistor   
File Size179KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

2SC4126MI-TL Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4

2SC4126MI-TL Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage11 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6000 MHz
Base Number Matches1

2SC4126MI-TL Related Products

2SC4126MI-TL 2SC4126MI-UL 2SC4126MI-UR 2SC4126MI-TR
Description RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4 4 4
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Collector-based maximum capacity 1.5 pF 1.5 pF 1.5 pF 1.5 pF
Collector-emitter maximum voltage 11 V 11 V 11 V 11 V
Configuration SINGLE SINGLE SINGLE SINGLE
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 6000 MHz 6000 MHz 6000 MHz 6000 MHz
Shell connection COLLECTOR COLLECTOR - COLLECTOR
Base Number Matches 1 1 1 -

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