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PLAD30KP45

Description
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size222KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

PLAD30KP45 Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

PLAD30KP45 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionPLASTIC PACKAGE-1
Contacts1
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage61.1 V
Minimum breakdown voltage50 V
Breakdown voltage nominal value55.55 V
Maximum clamping voltage80.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeS-PSSO-G1
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
PLAD30KP10 thru PLAD30KP400CA, e3
30kW Surface Mount Transient
Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
These Microsemi 30 kW Transient Voltage Suppressors (TVSs)
are designed for applications requiring protection of voltage-
sensitive electronic devices that may be damaged by harsh or
severe voltage transients including lightning per IEC61000-4-5
and class levels with various source impedances described
herein. This series is available in 10 to 400 volt Standoff
Voltages (V
WM
) in both unidirectional and bi-directional with either
5% or 10% tolerances of the Breakdown Voltage (V
BR
).
Microsemi also offers numerous other TVS products to meet
higher or lower power demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Available in both Unidirectional and Bidirectional
construction (Bidirectional with C or CA suffix)
Selections for 10 to 400 volt Standoff Voltages V
WM
Suppresses transients up to 30 kW @ 10/1000 µs and 200
kW @ 8/20 µs (see Figure 1)
Fast response
Optional 100%
screening for avionics grade
is available
by adding MA prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X) as well as surge
(3X) and 24 hours HTRB with post test V
Z
& I
R
(in the
operating direction for unidirectional or both directions for
bidirectional)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding MQ,
MX, or MV prefixes respectively to part numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding an “e3” suffix
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and
IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1,2,3,4: PLAD30KP10 - PLAD30KP400A or CA
Class 5: PLAD30KP10 - PLAD30KP400A or CA (short
distance)
Class 5: PLAD30KP10 - PLAD30KP220A or CA (long
distance)
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1,2, 3: PLAD30KP10 to PLAD30KP400A or CA
Class 4: PLAD30KP10 to PLAD30KP220A or CA
Secondary lightning protection per IEC61000-4-5 with 2
Ohms source impedance:
Class 2: PLAD30KP10 to PLAD30KP400A or CA
Class 3: PLAD30KP10 to PLAD30KP220A or CA
Class 4: PLAD30KP10 to PLAD30KP110A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 30,000 watts at
10/1000
μs
(also see Figures 1 and 2)
Impulse repetition rate (duty factor): 0.05%
t
clamping
(0 volts to V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating & Storage temperature: -65
º
C to +150
º
C
Thermal resistance: 0.5
º
C/W junction to case, or 50
º
C/W
junction to ambient when mounted on FR4 PC board with
recommended mounting pad with 1 oz Cu (see last page)
Steady-State Power dissipation: 250 watts at T
c
= 25
o
C,
or 2.5 watts at T
A
= 25
º
C when mounted on FR4 PC
board as described for thermal resistance above
Forward Surge: 1500 Amps (theoretical) at 8.3 ms half-
sine wave for unidirectional devices only
Solder temperatures: 260
º
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating readily solderable per MIL-
STD-750, method 2026
MARKING: Body marked with part number
POLARITY: For unidirectional devices, the
cathode is on the metal backside (package
bottom)
WEIGHT: 1.7-2.0 grams (approximate)
TAPE & REEL option: Standard per EIA-296
for axial package (add “TR” suffix to part
number)
See package dimension on last page
PLAD30KP10 thru 400CA, e3
Copyright
©
2007
9-12-2007 Rev G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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