SMG2317P
Elektronische Bauelemente
-0.9 A, -30 V, R
DS(ON)
300 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density process. Low R
DS(on)
assures minimal power loss
and conserves energy, making this device ideal for use in power
management circuitry. Typical applications are lower voltage
application, power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low Gate Charge
Fast switch.
Miniature SC-59 surface mount package saves
board space.
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Symbol
V
DS
V
GS
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
Ratings
-30
±20
-0.9
-0.75
-10
0.4
0.5
0.42
-55 ~ 150
250
285
Unit
V
V
A
A
A
A
W
W
°C
°C
/ W
I
D
I
DM
I
S
P
D
@ T
A
=25°C
P
D
@ T
A
=70°C
P
D
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
1
Notes:
1
2
Tj, Tstg
Thermal Resistance Data
t
≦
5 sec
Steady State
R
JA
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 1 of 5
SMG2317P
Elektronische Bauelemente
-0.9 A, -30 V, R
DS(ON)
300 m
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Switch Off Characteristics
Drain-Source Breakdown Voltage
Gate-Body Leakage
V
(BR)DSS
I
GSS
-30
-
-
Zero Gate Voltage Drain Current
I
DSS
-
-
-10
-
-
-
-
±100
-1
μA
V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
V
nA
V
DS
= 0V, I
D
= -250uA
V
DS
= 0V, V
GS
= ±20V
V
DS
= -24V, V
GS
= 0V
Switch On Characteristics
Gate-Threshold Voltage
On-State Drain Current
1
V
GS(th)
I
D(on)
-0.8
-2
-
Drain-Source On-Resistance
1
R
DS(ON)
-
-
Forward Transconductance
1
Diode Forward Voltage
g
fs
V
SD
-
-
-1.7
-
250
530
450
2
-0.7
-2.6
-
300
660
500
-
-1.2
S
V
mΩ
V
A
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -10V, I
D
= -1A
V
GS
= -4.5V, I
D
= -0.9A,T
J
= 55°C
V
GS
= -4.5V, I
D
= -0.9A
V
DS
= -5V, I
D
= -1.1A
I
S
= -0.4A, V
GS
= 0V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
-
-
-
2
0.5
1.1
3
-
-
nC
V
DS
= -10V, V
GS
= -5V,
I
D
= -0.9A
Switching
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Notes:
1
2
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
8
16
36
33
16
32
nS
93
94
V
DS
= -10V, V
GEN
= -10V,
R
G
= 50, I
D
= -0.9A
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 2 of 5
SMG2317P
Elektronische Bauelemente
-0.9 A, -30 V, R
DS(ON)
300 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 3 of 5
SMG2317P
Elektronische Bauelemente
-0.9 A, -30 V, R
DS(ON)
300 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 4 of 5
SMG2317P
Elektronische Bauelemente
-0.9 A, -30 V, R
DS(ON)
300 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 5 of 5
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