SMUN5311DW Series
Elektronische Bauelemente
NPN / PNP
Digital Small Signal Transistors
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
DESCRIPTION
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base−emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the SMUN5311DW series, two
complementary BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a premium.
SOT-363
A
E
L
B
FEATURE
Simplifies circuit design
Reduces board space
Reduces component count
Available in 8 mm, 7 inch/3000 unit tape and reel
The devices are Pb-Free
6
5
4
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(T
A
= 25° unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)
C
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Collector Currrent – Continuous
SYMBOL
V
CBO
V
CEO
I
C
VALUE
50
50
100
187(1)
256(2)
1.5(1)
2.0(2)
670(1)
490(2)
250(1)
385(2)
2.0(1)
3.0(2)
493(1)
325(2)
188(1)
208(2)
-55~150
UNIT
Vdc
Vdc
mAdc
ONE JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, T
A
=25°
C
P
D
Total Device Dissipation, Derate above 25°
C
Thermal Resistance, Junction to Ambient
R
θJA
mW
mW/°
C
°
C/W
BOTH JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, T
A
=25°
C
P
D
Total Device Dissipation, Derate above 25°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Junction Temperature & Storage Temperature
Note:
1. FR-4 @ minimum pad
2. FR-4 @ 1.0 x 1.0 inch pad
R
θJA
R
θJL
T
J
,T
STG
mW
mW/°
C
°
C/W
°
C/W
°
C
18-Dec-2009 Rev. A
Page 1 of 28
SMUN5311DW Series
Elektronische Bauelemente
NPN / PNP
Digital Small Signal Transistors
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Voltage
Collector-Emitter Cutoff Current
SMUN5311DW
SMUN5312DW
SMUN5313DW
SMUN5314DW
SMUN5315DW
Emitter-Base
Cutoff Current
SMUN5316DW
SMUN5330DW
SMUN5331DW
SMUN5332DW
SMUN5333DW
SMUN5334DW
SMUN5335DW
SMUN5311DW
SMUN5312DW
SMUN5313DW
SMUN5314DW
SMUN5335DW
Collector-Emitter
Saturation Voltage
SMUN5330DW
SMUN5331DW
SMUN5315DW
SMUN5316DW
SMUN5332DW
SMUN5333DW
SMUN5334DW
SMUN5311DW
SMUN5312DW
SMUN5313DW
SMUN5314DW
SMUN5315DW
DC Current Gain
SMUN5316DW
SMUN5330DW
SMUN5331DW
SMUN5332DW
SMUN5333DW
SMUN5334DW
SMUN5335DW
Note:
3. Pulse test: pulse width <300
µS,
duty cycle<2.0%
h
FE
V
CE(sat)
I
EBO
SYMBOL
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
MIN.
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
35
60
80
80
160
160
3.0
8.0
15
80
80
80
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
MAX.
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V
V
nA
nA
TEST CONDITION
I
C
=10µA, I
E
=0
I
C
=2mA, I
B
= 0
V
CB
=50V, I
E
=0
V
CE
=50V, I
B
=0
OFF CHARACTERISTICS
mA
V
EB
=6V, I
C
=0
ON CHARACTERISTICS
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
350
350
5.0
15
30
200
150
140
I
C
=10mA, I
B
=0.3mA
Vdc
I
C
=10mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=5mA
18-Dec-2009 Rev. A
Page 2 of 28
SMUN5311DW Series
Elektronische Bauelemente
NPN / PNP
Digital Small Signal Transistors
CHARACTERISTIC CURVES
TYPICAL ELECTRICAL CHARACTERISTICS
VCE(sat)COLLECT VOLAGE (VOL
,
OR
T
TS)
1
I /I = 10
C B
T
A
= 25 C
-
°
25 C
°
0.1
75 C
°
SMUN531
1DW NPN TRANSISTOR
1000
V
CE
= 10 V
°
T
A
= 57C
25 C
°
-25C
°
100
0.01
0.001
0
hFE, DC CURRENT
GAIN (NORMALIZED)
2
0
40
I , COLLECT CURRENT (mA)
OR
C
50
10
1
10
OR
I , COLLECT CURRENT (mA)
C
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
100
25 C
°
75 C
°
T
A
= 25 C
-
°
I , COLLECT CURRENT(mA)
OR
C
, ACIT
Cob CAP ANCE (pF)
3
f = 1 MHz
I = 0 V
E
°
C
T
A
= 25
10
1
2
0.1
1
0.01
V
O
= 5 V
0.001
0
1
2
5
6
7
3
4
V
in
INPUT TAGE (VOL
,
VOL
TS)
8
9
10
0
0
1
0
20
30
40
VOL
TS)
V
R
, REVERSE BIASTAGE (VOL
50
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
T
A
= 25 C
-
°
25 C
°
75 C
°
1
Vin INPUT TAGE (VOL
,
VOL
TS)
0.1
0
10
2
0
30
40
I , COLLECT CURRENT (mA)
OR
C
50
Figure 6. Input Voltage versus Output Current
18-Dec-2009 Rev. A
Page 5 of 28
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