BUK7607-55B,118 datasheet, PDF

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BUK7607-55B,118: DescriptionN-channel TrenchMOS standard level FET; CategoryDiscrete semiconductor The transistor; File Size202KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK7607-55B,118 Overview

N-channel TrenchMOS standard level FET

BUK7607-55B,118 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Parts packaging code	D2PAK
package instruction	PLASTIC, D2PAK-3
Contacts	3
Manufacturer packaging code	SOT404
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	351 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	119 A
Maximum drain current (ID)	119 A
Maximum drain-source on-resistance	0.0071 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	203 W
Maximum pulsed drain current (IDM)	478 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK7607-55B

N-channel TrenchMOS standard level FET

Rev. 2 — 26 July 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits



Low conduction losses due to low

on-state resistance



Q101 compliant



Suitable for standard level gate drive

sources



Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications



12 V and 24 V loads



Automotive systems



General purpose power switching



Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

Conditions

≥

25 °C; T

≤

175 °C

= 10 V; T

= 25 °C;

see

Figure 1;

see

Figure 3

[1]

Min

Typ

5.8

Max

203

7.1

Unit

mΩ

total power dissipation T

= 25 °C; see

Figure 2

drain-source on-state

resistance

= 10 V; I

= 25 A;

= 25 °C; see

Figure 11;

see

Figure 12

= 75 A; V

sup

≤

55 V;

= 50

Ω;

= 10 V;

j(init)

= 25 °C; unclamped

= 10 V; I

= 25 A;

= 44 V; T

= 25 °C;

see

Figure 13

Static characteristics

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

gate-drain charge

351

Dynamic characteristics

[1]

Continuous current is limited by package.

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