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PUMB20,115

Description
PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
CategoryDiscrete semiconductor    The transistor   
File Size65KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PUMB20,115 Overview

PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

PUMB20,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTSSOP
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging codeSOT363
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
PEMB20; PUMB20
PNP/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 03 — 1 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors
Table 1.
Product overview
Package
NXP
PEMB20
PUMB20
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD20
PUMD20
NPN/NPN
complement
PEMH20
PUMH20
Type number
1.2 Features
I
I
I
I
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
0.8
Typ
-
-
2.2
1
Max
−50
−100
2.86
1.2
Unit
V
mA
kΩ

PUMB20,115 Related Products

PUMB20,115 PEMB20,115
Description PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
Brand Name NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code TSSOP SOT
package instruction SMALL OUTLINE, R-PDSO-G6 PLASTIC PACKAGE-6
Contacts 6 6
Manufacturer packaging code SOT363 SOT666
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30
JESD-30 code R-PDSO-G6 R-PDSO-F6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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