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BAT54J,115

Description
0.2 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size51KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BAT54J,115 Overview

0.2 A, SILICON, SIGNAL DIODE

BAT54J,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOD
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeSOD323F
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
BAT54J
Schottky barrier single diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier single diode with an integrated guard ring for stress protection,
encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device
(SMD) plastic package.
1.2 Features
I
I
I
I
Low forward voltage
Very small and flat lead SMD plastic package
Low capacitance
Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications
I
Voltage clamping
I
Line termination
I
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 mA
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
200
30
320
Unit
mA
V
mV
Pulse test: t
p
300
µs; δ ≤
0.02.
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