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BSR16,215

Description
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size133KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BSR16,215 Overview

600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BSR16,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
GuidelineIEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)365 ns
Maximum opening time (tons)40 ns
DISCRETE SEMICONDUCTORS
DATA SHEET
BSR15; BSR16
PNP switching transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 13
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