DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BFS20W
NPN medium frequency transistor
Product data sheet
1999 Apr 21
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
FEATURES
•
Low current (max. 25 mA)
•
Low voltage (max. 20 V).
•
Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
•
IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.
MARKING
1
handbook, halfpage
BFS20W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
TYPE NUMBER
BFS20W
Note
1.
∗
= -: Made in Hong Kong.
∗
= t: Made in Malaysia.
MARKING CODE
(1)
N1∗
Fig.1
Top view
2
MAM062
Simplified outline (SOT323; SC-70) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
30
20
4
25
25
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 21
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
BE
C
c
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 100
°C
I
C
= 0; V
EB
= 4 V
I
C
= 7 mA; V
CE
= 10 V
I
C
= 7 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 10 V; f = 100 MHz
MIN.
−
−
−
40
−
−
−
360
TYP.
−
−
−
85
740
1
350
470
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
BFS20W
UNIT
K/W
MAX.
100
10
100
−
900
−
−
−
UNIT
nA
µA
nA
mV
pF
fF
MHz
1999 Apr 21
3
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BFS20W
10
3
handbook, halfpage
hFE
(1)
MGR830
10
3
handbook, halfpage
MGR831
VCEsat
(mV)
(1)
(2)
(3)
10
2
(2)
(3)
10
2
10
1
10
−1
1
10
IC (mA)
10
2
10
10
−1
1
10
IC (mA)
10
2
V
CE
= 10 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 10.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Collector-emitter saturation voltage as a
function of collector current; typical values.
MGR832
handbook, halfpage
1000
handbook, halfpage
25
MGR833
VBE
(mV)
800
(1)
IC
(mA)
(1)
(2)
20
(2)
(3)
15
600
(3)
(4)
10
(5)
400
5
(6)
200
10
−1
V
CE
= 10 V.
(1) T
amb
=
−100 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
0
1
10
IC (mA)
10
2
0
2
4
6
8
10
VCE (V)
T
amb
= 25
°C.
(1) I
B
= 280
µA.
(2) I
B
= 230
µA.
(3) I
B
= 180
µA.
(4) I
B
= 130
µA.
(5) I
B
= 80
µA.
(6) I
B
= 30
µA.
Fig.4
Base-emitter voltage as a function of
collector current; typical values.
Fig.5
Collector current as a function of
collector-emitter voltage; typical values.
1999 Apr 21
4
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
PACKAGE OUTLINE
BFS20W
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 21
5
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