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BC868,115

Description
1 A, 20 V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size1MB,23 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BC868,115 Overview

1 A, 20 V, NPN, Si, POWER TRANSISTOR

BC868,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionPLASTIC, MPT3, SMD, UPAK-3
Contacts3
Manufacturer packaging codeSOT89
Reach Compliance Codecompli
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
Rev. 8 — 18 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP68
BC868
BC68PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP69
BC869
BC69PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Two current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
20
2
3
Unit
V
A
A

BC868,115 Related Products

BC868,115 BCP68,115 BCP68/DG/B2,115 BC868-25,115 30PDA20_15 BCP68-25,135 BC68-25PA,115 BC68PA,115
Description 1 A, 20 V, NPN, Si, POWER TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR Standard Recovery Diode 1 A, 20 V, NPN, Si, POWER TRANSISTOR TRANSISTOR,BJT,NPN,20V V(BR)CEO,2A I(C),LLCC 1 A, 20 V, NPN, Si, POWER TRANSISTOR
Brand Name NXP Semiconduc NXP Semiconduc - NXP Semiconductor - NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to - conform to conform to conform to
Maker NXP NXP NXP NXP - - NXP NXP
Parts packaging code SOT-89 SC-73 - SOT-89 - SC-73 DFN DFN
Contacts 3 4 - 3 - 4 3 3
Manufacturer packaging code SOT89 SOT223 - SOT89 - SOT223 SOT1061 SOT1061
Reach Compliance Code compli compli compli compliant - compli compli compli
Maximum collector current (IC) 1 A 1 A - 1 A - 1 A - 2 A
Configuration SINGLE SINGLE - SINGLE - SINGLE - Single
Minimum DC current gain (hFE) 60 60 - 160 - 160 - 85
JESD-609 code e3 e3 - e3 - e3 - e3
Humidity sensitivity level 1 1 - 1 - 1 - 1
Maximum operating temperature 150 °C 150 °C - 150 °C - 150 °C - 150 °C
Polarity/channel type NPN NPN - NPN - NPN - NPN
Maximum power dissipation(Abs) 1 W 1.5 W - 1 W - 1.4 W - 1.65 W
surface mount YES YES - YES - YES - YES
Terminal surface Tin (Sn) Tin (Sn) - Tin (Sn) - Tin (Sn) - Tin (Sn)
Nominal transition frequency (fT) 40 MHz 40 MHz - 40 MHz - 40 MHz - 40 MHz

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