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PBLS6005D,115

Description
60 V PNP BISS loadswitch
CategoryDiscrete semiconductor    The transistor   
File Size127KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBLS6005D,115 Overview

60 V PNP BISS loadswitch

PBLS6005D,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeTSOP
package instructionPLASTIC, SC-74, 6 PIN
Contacts6
Manufacturer packaging codeSOT457
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)185 MHz
Base Number Matches1
PBLS6005D
60 V PNP BISS loadswitch
Rev. 02 — 7 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) transistor and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
collector-emitter saturation
resistance
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
I
C
=
−1
A;
I
B
=
−100
mA
open base
Conditions
open base
[1]
Min
-
-
-
Typ
-
-
255
Max
−60
−1
340
Unit
V
A
mΩ
TR1; PNP low V
CEsat
transistor
[2]
TR2; NPN resistor-equipped transistor
V
CEO
I
O
R1
R2/R1
[1]
[2]
-
-
33
0.8
-
-
47
1
50
100
61
1.2
V
mA
kΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Pulse test: t
p
300
µs; δ ≤
0.02

PBLS6005D,115 Related Products

PBLS6005D,115 PBLS6005D
Description 60 V PNP BISS loadswitch 60 V PNP BISS loadswitch
Is it Rohs certified? conform to conform to
Parts packaging code TSOP SC-74
package instruction PLASTIC, SC-74, 6 PIN PLASTIC, SC-74, 6 PIN
Contacts 6 6
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO 1 BUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC) 1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 80
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP NPN AND PNP
Maximum power dissipation(Abs) 0.6 W 0.6 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 185 MHz 185 MHz
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