LX5510BCLQ datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Wireless rf/communication> Radio frequency and microwave> LX5510BCLQ

LX5510BCLQ: DescriptionNarrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 3 X 3 MM, LEAD-FREE, PLASTIC, MLPQ-16; CategoryWireless rf/communication Radio frequency and microwave; File Size138KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

Download Datasheet Parametric Compare View All

LX5510BCLQ Overview

Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 3 X 3 MM, LEAD-FREE, PLASTIC, MLPQ-16

LX5510BCLQ Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
Reach Compliance Code	unknown
structure	COMPONENT
Gain	19 dB
Maximum input power (CW)	15 dBm
JESD-609 code	e3
Maximum operating frequency	2500 MHz
Minimum operating frequency	2400 MHz
Maximum operating temperature	70 °C
Minimum operating temperature
RF/Microwave Device Types	NARROW BAND LOW POWER
Terminal surface	Matte Tin (Sn)

LX5510BCLQ Preview

LX5510B

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

RODUCTION

ATA

HEET

DESCRIPTION

KEY FEATURES

Advanced InGaP HBT

2.4 – 2.5GHz Operation

Single-Polarity 3.3V Supply

Low Quiescent Current I

~70mA

Power Gain ~19dB @ 2.45GHz

and Pout = 19dBm

Total Current 135mA for Pout =

19dBm @ 2.45GHz OFDM

EVM ~ 3.0% for 64QAM /

54Mbps and Pout = 19dBm

Small Footprint (3 x 3 mm

)

Low Profile (0.9mm)

APPLICATIONS

The LX5510B is a power amplifier

optimized for WLAN applications in

the 2.4-2.5 GHz frequency range. The

PA is implemented as a two-stage

monolithic microwave integrated

circuit (MMIC) with active bias and

input/output pre-matching.

The device is manufactured with an

InGaP/GaAs Heterojunction Bipolar

Transistor

(HBT)

process

(MOCVD). With a single supply of

3.3 volts and a low quiescent current

of 70mA the power gain is 19dB 2.4 –

2.5GHz.

For +19dBm OFDM output power

(64QAM, 54Mbps), the PA provides a

low EVM (Error-Vector Magnitude) of

3.0%, and consumes 135mA total DC

current with the nominal 3.3V bias.

The LX5510B is available in a 16-

pin 3mmx3mm micro-lead package

(MLP). The compact footprint, low

profile, and excellent thermal capability

of the MLP package makes the

LX5510B an ideal solution for medium-

gain power amplifier requirements for

IEEE 802.11b/g applications

WWW .

Microsemi

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

IEEE 802.11b/g

PRODUCT HIGHLIGHT

PACKAGE ORDER INFO

(°C)

0 to 70

Plastic MLPQ

16 pin

LX5510BCLQ

LX5510B

Note: Available in Tape & Reel. Append the letters “TR” to the

part number. (i.e. LX5510BLQTR)

This device is classified as EDS Level 1 in accordance with MIL-

STD-883, Method 3015 (HBM) testing. Appropriate ESD

procedures should be used when handling this device.

2004

Rev. 1.0, 2004-06-15

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

LX5510B

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

RODUCTION

ATA

HEET

ABSOLUTE MAXIMUM RATINGS

PACKAGE PIN OUT

WWW .

Microsemi

DC Supply Voltage, RF off ...............................................................................6V

Collector Current ........................................................................................400mA

Total Power Dissipation....................................................................................2W

RF Input Power........................................................................................... 15dBm

Operation Ambient Temperature ...................................................-40°C to +85°C

Storage Temperature....................................................................-60°C to +150°C

Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ......255°(+5, -0)

Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to

Ground. Currents are positive into, negative out of specified terminal

VCC

N.C.

VC1

N.C.

VC2

RF OUT

N.C.

RF IN

N.C.

LQ P

ACKAGE

(Bottom View)

VB1

VB2

N.C.

THERMAL DATA

Pb-free 100% Matte Tin Lead Finish

Plastic MLPQ 16-Pin

10°C/W

50°C/W

THERMAL RESISTANCE

JUNCTION TO

ASE

THERMAL RESISTANCE

JUNCTION TO

MBIENT

FUNCTIONAL PIN DESCRIPTION

Name

RF IN

VB1

VB2

VCC

RF OUT

VC1

Description

RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first

stage.

Bias current control voltage for the first stage.

Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control

voltage (VB1) into a single reference voltage (referred to as V

REF

) through an external resistor bridge.

Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins,

resulting in a single supply voltage (referred to as V

RF output for the power amplifier.

Power supply for first stage amplifier. The VC1 feed line should be terminated with a 3.9pF bypass capacitor 50

mil apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined

with VC2 and VCC pins, resulting in a single supply voltage (referred to as V

Power supply for second stage amplifier. The VC2 feed line should be driven with a 8.2nH AC blocking inductor

and 1µF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage

(referred to as V

The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power

amplifier.

VC2

GND

ACKAGE

ATA

ACKAGE

ATA

2004

Rev. 1.0, 2004-06-15

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 2

LX5510B

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

RODUCTION

ATA

HEET

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C

≤

otherwise noted and the following test conditions: V

= 3.3V, V

REF

= 2.88V, I

= 70mA, T

= 25°C

Parameter

SECTION HEADER

Frequency Range

Power Gain at P

OUT

= 19dBm

EVM at Pout = 19dBm

Total Current @ P

OUT

= 19dBm

Quiescent Current

Bias Control Reference Current

Small-Signal Gain

Gain Flatness

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Reverse Isolation

Second Harmonic

Third Harmonic

2 Side Lobe

Total current Pout=23 dBm

Ramp-On Time

≤

70°C except where

WWW .

Microsemi

Symbol

Test Conditions

Min

2.4

LX5510B

Typ

Max

2.5

3.0

135

1.5

±0.5

-55

-50

190

100

Units

GHz

dBc

64QAM / 54Mbps OFDM

C_TOTAL

REF

S21

∆S21

S11

S22

S12

For I

= 70mA

Over 100MHz

0°C to +70°C

Pout = 19dBm

Pout = 19dbm

23 dBm 11 Mbps CCK

11 Mbps CCK

10 ~ 90%

Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.

PACKAGE DIMENSIONS

16-Pin MLPQ Plastic (3x3mm EP)

Dim

ILLIMETERS

MIN

MAX

0.80

1.00

0.05

0.18

0.30

0.18

0.30

3.00 BSC

0.5 BSC

1.50

1.80

1.50

1.80

0.2

0.35

0.45

NCHES

MIN

MAX

0.031

0.039

0.002

0.007

0.012

0.007

0.012

0.118 BSC

0.020 BSC

0.051

0.061

0.051

0.061

0.008

0.012

0.020

LECTRICALS

Note:

1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not

include solder coverage.

2004

Rev. 1.0, 2004-06-15

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

LX5510B

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

RODUCTION

ATA

HEET

S PARAMETER DATA

Frequency = 2.40GHz

m1 = 20.08

Frequency = 2.50GHz

m2 = 18.93

Frequency = 2.45GHz

m3 = -19.87

EVM DATA WITH 54MB/S64QAM OFDM

EVM_PA /(%)

Current 3.3V

EVM PA Only

160

150

140

130

120

110

100

8 10 12 14 16 18 20 22

Output Power /(dBm)

= 3.3V, V

REF

= 2.88V, I

= 70mA

WWW .

Microsemi

dB(S(2,2))

dB(S(1,1))

-10

-20

-30

-40

-50

dB(S(2,1))

dB(S(1,2))

Frequency (GHz)

= 3.3V, V

REF

= 2.88V, I

= 70mA

ACP DATA WITH 54MB/S 64 QAM OFDM

-45.0

-47.5

ACP /(dBc)

ACP 30MHz

SPECTRUM WITH 23DBM 11MB/S CCK

-50.0

-52.5

-55.0

-57.5

-60.0

= 3.3V, V

REF

= 2.88V, I

= 70mA, I

= 190mA

Output Power /(dBm)

= 3.3V, V

REF

= 2.88V, I

= 70mA

SUPPLY CURRENT WITH 11MB/S CCK

200

11 Mbps CCK Current 3V3

175

Current /(mA)

150

Current / (mA)

HARTS

125

100

Output Power /(dBm)

= 3.3V, V

REF

= 2.88V, I

= 70MA

2004

Rev. 1.0, 2004-06-15

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 4

LX5510B

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

RODUCTION

ATA

HEET

NOTES

WWW .

Microsemi

OTES

PRODUCTION DATA – Information contained in this document is proprietary to

Microsemi and is current as of publication date. This document may not be modified in

any way without the express written consent of Microsemi. Product processing does not

necessarily include testing of all parameters. Microsemi reserves the right to change the

configuration and performance of the product and to discontinue product at any time.

2004

Rev. 1.0, 2004-06-15

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 6

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

LX5510BCLQ Related Products

	LX5510BCLQ	LX5510BCLQTR
Description	Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 3 X 3 MM, LEAD-FREE, PLASTIC, MLPQ-16	Narrow Band Low Power Amplifier, 2400MHz Min, 2500MHz Max, 3 X 3 MM, LEAD-FREE, PLASTIC, MLPQ-16
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Microsemi	Microsemi
Reach Compliance Code	unknown	unknown
structure	COMPONENT	COMPONENT
Gain	19 dB	19 dB
Maximum input power (CW)	15 dBm	15 dBm
JESD-609 code	e3	e3
Maximum operating frequency	2500 MHz	2500 MHz
Minimum operating frequency	2400 MHz	2400 MHz
Maximum operating temperature	70 °C	70 °C
RF/Microwave Device Types	NARROW BAND LOW POWER	NARROW BAND LOW POWER
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)

Recommended Resources

Transistor Broadband Video Amplifier

One of the single-tube series transistor regulated power supply circuits

Multifunctional motor protection circuit composed of leakage relay

Use glow indicator light to indicate motor working status circuit

Prote MAM-A typical application circuit

Optocouplers and discrete Schmitt triggers used to drive 54/74 TIL circuits

Understanding the Timing Diagram: The most important thing for MCU hardware programming is to understand the timing diagram. The following are other people's opinions:Look from top to bottom, from left to right! The cross lines repres...; 江汉大学南瓜 FPGA/CPLD

Introduction to RF EDA simulation software (including algorithms and principles): Introduction to RF EDA simulation software (including algorithms and principles)...; JasonYoo PCB Design

Problem with ZwQueryInformationFile taking full path: I want to get the full path of a file, for example: C:\123\abc.txt, but when using ZwQueryInformationFile, I get \123\abc.txt. I checked some information online but couldn't find an implementation. Ma...; fayshaw Embedded System

【Looking for the New Year’s spirit】The New Year’s spirit during the Spring Festival: I saw the activities in the forum, so I came to support them and share with you some of our New Year spirit. I hope everyone will be prosperous in the new year! ! ! !Our family shop, my uncle is in ch...; qixiangyujj Talking

Does anyone have the Chinese version of ad8331's information?: I want a Chinese version of the AD8331 document. Thank you very much:congratulate:...; 西西西 Electronics Design Contest

I want to take a computer network exam: I want to take the computer network exam , can you recommend me some information?...; fighting RF/Wirelessly

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components