DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PBSS5350Z
50 V low V
CEsat
PNP transistor
Product data sheet
Supersedes data of 2003 Jan 20
2003 May 13
NXP Semiconductors
Product data sheet
50 V low V
CEsat
PNP transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High collector current capability: I
C
and I
CM
•
High collector current gain (h
FE
) at high I
C
•
Higher efficiency leading to less heat generation
•
Reduced PCB area requirements compared to DPAK.
APPLICATIONS
•
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
•
Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTION
PNP low V
CEsat
transistor in a SOT223 plastic package.
NPN complement: PBSS4350Z.
1
2
3
handbook, halfpage
PBSS5350Z
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
4
base
collector
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX.
−50
−3
−5
<150
UNIT
V
A
A
mΩ
4
2, 4
1
3
Top view
MAM288
MARKING
TYPE NUMBER
PBSS5350Z
MARKING CODE
PB5350
Fig.1
Simplified outline (SOT223) and symbol.
2003 May 13
2
NXP Semiconductors
Product data sheet
50 V low V
CEsat
PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
notes 1 and 3
T
amb
≤
25
°C;
notes 2 and 3
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5350Z
MAX.
−60
−50
−6
−3
−5
−1
1.35
2
+150
150
+150
V
V
V
A
A
A
W
W
UNIT
°C
°C
°C
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; notes 1 and 3
in free air; notes 2 and 3
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
VALUE
92
62.5
UNIT
K/W
K/W
2003 May 13
3
NXP Semiconductors
Product data sheet
50 V low V
CEsat
PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
CONDITIONS
−
−
−
200
200
100
−
−
−
−
−
−
100
−
V
CB
=
−50
V; I
E
= 0; T
j
= 150
°C
emitter-base cut-off current
DC current gain
V
EB
=
−5
V; I
C
= 0
V
CE
=
−2
V;
I
C
=
−500
mA
I
C
=
−1
A; note 1
I
C
=
−2
A; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−50
mA
I
C
=
−2
A; I
B
=
−200
mA; note 1
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation
voltage
transition frequency
collector capacitance
I
C
=
−2
A; I
B
=
−200
mA; note 1
I
C
=
−2
A; I
B
=
−200
mA; note 1
−
−
−
−
−
−
120
−
−
−
−
MIN.
PBSS5350Z
TYP.
−
−
−
MAX.
−100
−50
−100
−
−
−
−100
−180
−300
<150
−1.2
−1.1
−
40
UNIT
nA
μA
nA
collector-base cut-off current V
CB
=
−50
V; I
E
= 0
mV
mV
mV
mΩ
V
V
MHz
pF
base-emitter turn-on voltage V
CE
=
−2
V; I
C
=
−1
A; note 1
I
C
=
−100
mA; V
CE
=
−5
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
2003 May 13
4
NXP Semiconductors
Product data sheet
50 V low V
CEsat
PNP transistor
PBSS5350Z
handbook, halfpage
1000
MGW167
handbook, halfpage
−1.2
MGW168
hFE
800
(1)
VBE
(V)
−0.8
(1)
600
(2)
400
(2)
−0.4
200
(3)
(3)
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
I C (mA)
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
I C (mA)
V
CE
=
−2
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−2
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
3
handbook, halfpage
VCEsat
(mV)
−10
2
(1)
(2)
(3)
MGW169
handbook, halfpage
−1.4
MGW170
VBEsat
(V)
−1.2
−1.0
(1)
−0.8
(2)
−10
−0.6
(3)
−0.4
−0.2
−10
−1
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
I C (mA)
−1
−10
−10
2
−10
3
−10
4
I C (mA)
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2003 May 13
5
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