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PBSS5220V,115

Description
20 V, 2 A PNP low V_CEsat (BISS) transistor
CategoryDiscrete semiconductor    The transistor   
File Size160KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PBSS5220V,115 Overview

20 V, 2 A PNP low V_CEsat (BISS) transistor

PBSS5220V,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT
package instructionPLASTIC PACKAGE-6
Contacts6
Manufacturer packaging codeSOT666
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.9 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)185 MHz
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
NPN complement: PBSS4220V.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
1.4 Quick reference data
Table 1.
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
t
p
300
μs
I
C
=
−1
A;
I
B
=
−100
mA
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
140
Max
−20
−2
−4
210
Unit
V
A
A
Pulse test: t
p
300
μs; δ ≤
0.02.

PBSS5220V,115 Related Products

PBSS5220V,115 PBSS5220V
Description 20 V, 2 A PNP low V_CEsat (BISS) transistor 20 V, 2 A PNP low VCEsat (BISS) transistor
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction PLASTIC PACKAGE-6 PLASTIC PACKAGE-6
Contacts 6 6
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 60 220
JESD-30 code R-PDSO-F6 R-PDSO-F6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.9 W 0.9 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 185 MHz 185 MHz
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