PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
NPN complement: PBSS4220V.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
1.4 Quick reference data
Table 1.
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
t
p
≤
300
μs
I
C
=
−1
A;
I
B
=
−100
mA
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
140
Max
−20
−2
−4
210
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
4
6
5
4
3
1, 2, 5, 6
Simplified outline
Symbol
collector
collector
1
2
3
sym030
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS5220V
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
Marking codes
Marking code
N7
Type number
PBSS5220V
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
t
p
≤
300
μs
T
amb
≤
25
°C
[1][4]
[2][4]
[3][4]
Conditions
open emitter
open base
open collector
t
p
≤
300
μs
Min
-
-
-
-
-
-
-
-
-
-
-
Max
−20
−20
−5
−2
−4
−0.3
−0.6
0.3
0.5
0.9
150
Unit
V
V
V
A
A
A
A
W
W
W
°C
T
j
junction temperature
PBSS5220V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
2 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
ambient temperature
storage temperature
Conditions
Min
−65
−65
Max
+150
+150
Unit
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Reflow soldering is the only recommended soldering method.
1.2
P
tot
(W)
0.8
006aaa424
(1)
(2)
0.4
(3)
0
0
40
80
120
160
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS5220V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
3 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][4]
[2][4]
[3][4]
Min
-
-
-
-
Typ
-
-
-
-
Max
410
250
140
80
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Reflow soldering is the only recommended soldering method.
10
3
Z
th(j-a)
(K/W)
10
2
006aaa425
duty cycle =
1
0.5
0.33
0.2
0.1
0.05
0.75
10
0.02
0.01
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS5220V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
4 of 13
NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
=
−20
V; I
E
= 0 A
V
CB
=
−20
V; I
E
= 0 A;
T
j
= 150
°C
V
CE
=
−20
V; V
BE
= 0 V
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−2
V; I
C
=
−1
mA
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CE
=
−2
V; I
C
=
−1
A
V
CE
=
−2
V; I
C
=
−2
A
V
CEsat
collector-emitter
saturation voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
I
C
=
−2
A; I
B
=
−100
mA
I
C
=
−2
A; I
B
=
−200
mA
R
CEsat
V
BEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
220
220
220
155
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
495
440
310
220
120
−50
−75
−155
−140
−305
−265
140
−0.95
−1
−0.8
8
34
42
140
45
185
185
15
Max
−0.1
−50
−0.1
−0.1
-
-
-
-
-
−80
−115
−220
−210
−455
−390
210
−1.1
−1.1
−1
-
-
-
-
-
-
-
20
Unit
μA
μA
μA
μA
I
CES
I
EBO
h
FE
mV
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
collector-emitter
saturation resistance
I
C
=
−1
A; I
B
=
−100
mA
base-emitter saturation I
C
=
−1
A; I
B
=
−50
mA
voltage
I
C
=
−1
A; I
B
=
−100
mA
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
V
CE
=
−10
V; I
C
=
−50
mA;
f = 100 MHz
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−1
A; I
Bon
=
−50
mA;
I
Boff
= 50 mA
[1]
[1]
150
-
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
PBSS5220V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 14 December 2009
5 of 13
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