DISCRETE SEMICONDUCTORS
DATA SHEET
PMBT2369
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 22
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 200 mA)
•
Low voltage (max. 15 V).
APPLICATIONS
•
High-speed switching, especially in portable equipment.
DESCRIPTION
handbook, halfpage
PMBT2369
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER
PMBT2369
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBT2369
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*1J
Top view
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
15
5
200
300
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Jan 22
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 125
°C
I
C
= 0; V
EB
= 4 V
I
C
= 10 mA; V
CE
= 1 V
I
C
= 10 mA; V
CE
= 1 V; T
amb
=
−55 °C
I
C
= 100 mA; V
CE
= 2 V
V
CEsat
V
BEsat
C
c
f
T
t
on
t
d
t
r
t
off
t
s
t
f
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; I
B
= 1 mA
I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
=
−1.5
mA
−
−
−
40
20
20
−
700
−
500
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMBT2369
VALUE
500
UNIT
K/W
MAX.
400
30
100
120
−
−
250
850
4
−
UNIT
nA
µA
nA
mV
mV
pF
MHz
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
10
4
6
20
10
10
ns
ns
ns
ns
ns
ns
2004 Jan 22
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT2369
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 0.5 to 4.2 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 1 kΩ; R
B
= 1 kΩ; R
C
= 270
Ω.
V
BB
= 0.2 V; V
CC
= 2.7 V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
2004 Jan 22
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
PMBT2369
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 22
5
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