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PMBT2369

Description
200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size59KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMBT2369 Overview

200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PMBT2369 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)500 MHz
Maximum off time (toff)20 ns
Maximum opening time (tons)10 ns
VCEsat-Max0.25 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBT2369
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 22

PMBT2369 Related Products

PMBT2369 PMBT2369,215 PMBT2369,235
Description 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Is it Rohs certified? conform to conform to conform to
Parts packaging code SOT-23 TO-236 TO-236
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3
Reach Compliance Code compli compli compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.35 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 500 MHz 500 MHz 500 MHz
Maximum off time (toff) 20 ns 20 ns 10 ns
Maximum opening time (tons) 10 ns 10 ns 20 ns
Base Number Matches 1 1 1
Collector-based maximum capacity 4 pF 4 pF -
VCEsat-Max 0.25 V 0.25 V -
Brand Name - NXP Semiconduc NXP Semiconductor
Manufacturer packaging code - SOT23 SOT23
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