DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT5551
NPN high-voltage transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 160 V).
APPLICATIONS
•
General purpose
•
Telephony.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBT5401.
PINNING
PIN
1
2
3
base
emitter
collector
PMBT5551
DESCRIPTION
handbook, halfpage
3
3
1
MARKING
TYPE NUMBER
PMBT5551
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBT5551
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING
CODE
(1)
Top view
1
2
MAM255
2
*G1
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
180
160
6
300
600
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Jan 21
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMBT5551
VALUE
500
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 120 V
I
E
= 0; V
CB
= 120 V; T
amb
= 100
°C
I
C
= 0; V
EB
= 4 V
V
CE
= 5 V; (see Fig.2)
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
80
80
30
−
−
−
−
−
−
100
−
−
250
−
150
200
1
1
6
30
300
8
mV
mV
V
V
pF
pF
MHz
dB
MIN.
−
−
−
MAX.
50
50
50
UNIT
nA
µA
nA
2004 Jan 21
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PMBT5551
handbook, full pagewidth
160
MGD814
hFE
120
VCE = 5 V
80
40
0
10
−1
1
10
10
2
IC mA
10
3
Fig.2 DC current gain; typical values
2004 Jan 21
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
PMBT5551
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 21
5
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