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PMBT5551,215

Description
300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size58KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMBT5551,215 Overview

300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR

PMBT5551,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.2 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT5551
NPN high-voltage transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21

PMBT5551,215 Related Products

PMBT5551,215 PMBT5551,235 PMBT5551/G,215 PMBT5551
Description 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
Number of components 1 1 1 1
Number of terminals 3 3 3 3
surface mount YES YES Yes YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to conform to - conform to
Maker NXP NXP - NXP
Parts packaging code TO-236 TO-236 - SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 - 3
Reach Compliance Code compliant compliant - compli
ECCN code EAR99 EAR99 - EAR99
Maximum collector current (IC) 0.3 A 0.3 A - 0.3 A
Collector-based maximum capacity 6 pF 6 pF - 6 pF
Collector-emitter maximum voltage 160 V 160 V - 160 V
Configuration SINGLE SINGLE - SINGLE
Minimum DC current gain (hFE) 30 30 - 30
JESD-30 code R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3
JESD-609 code e3 e3 - e3
Humidity sensitivity level 1 1 - 1
Maximum operating temperature 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 - 260
Polarity/channel type NPN NPN - NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W - 0.25 W
Certification status Not Qualified Not Qualified - Not Qualified
Terminal surface Tin (Sn) Tin (Sn) - Tin (Sn)
Maximum time at peak reflow temperature 40 40 - 30
Nominal transition frequency (fT) 100 MHz 100 MHz - 100 MHz
VCEsat-Max 0.2 V 0.2 V - 0.2 V
Base Number Matches 1 1 - 1
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