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PMST5551,115

Description
300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size126KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMST5551,115 Overview

300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR

PMST5551,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.2 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMST5550; PMST5551
NPN high-voltage transistors
Product data sheet
Supersedes data of 1997 May 20
1999 Apr 29

PMST5551,115 Related Products

PMST5551,115 PMST5550,115 PMST5550,135
Description 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to
Parts packaging code SC-70 SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Manufacturer packaging code SOT323 SOT323 SOT323
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A
Collector-based maximum capacity 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 160 V 140 V 140 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 80 60 60
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.2 V 0.25 V 0.25 V
Base Number Matches 1 1 1
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