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PDTA144WMB,315

Description
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ
CategoryDiscrete semiconductor    The transistor   
File Size703KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PDTA144WMB,315 Overview

PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ

PDTA144WMB,315 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeDFN
Contacts3
Manufacturer packaging codeSOT883B
Reach Compliance Codecompli
Is SamacsysN
Base Number Matches1
PDTA144WMB
83B
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ
Rev. 1 — 2 July 2012
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTC144WMB.
SO
T8
1.2 Features and benefits
100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic
package
Low package height of 0.37 mm
1.3 Applications
Low-current peripheral driver
Control of IC inputs
Replaces general-purpose transistors
in digital applications
Mobile applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter
voltage
output current
bias resistor 1 (input)
bias resistor ratio
T
amb
= 25 °C
Conditions
open base
Min
-
-
33
0.37
Typ
-
-
47
0.47
Max
-50
-100
61
0.57
Unit
V
mA
kΩ
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