Ordering number:ENN6406
N-Channel Silicon MOSFET
2SK2530
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Low voltage drive.
Package Dimensions
unit:mm
2083B
[2SK2530]
6.5
5.0
4
1.5
2.3
0.5
0.85
0.7
0.8
1.6
5.5
7.0
1.2
7.5
0.6
1
2
3
0.5
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2092B
[2SK2530]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92500TS (KOTO) TA-2182 No.6406–1/4
2SK2530
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW
≤
10µs, duty cycle
≤
1%
Tc=25˚C
Conditions
Ratings
250
±30
2
8
1
20
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
ID=1mA, VGS=0
IG=±100µA, VGS=0
VDS=250V, VGS=0
VGS=±25V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
VGS=10V, ID=1A
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=2A, VGS=0
IS=2A, di / dt=100µA/µs
2.0
1.3
1.9
1.5
160
40
15
10
13
80
30
1.0
90
1.5
2.0
Conditions
Ratings
min
250
±30
1.0
±10
3.0
typ
max
Unit
V
V
mA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
ns
Marking : K2530
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
VDD=100V
ID=1A
RL=100Ω
D
G
VOUT
P.G
50Ω
2SK2530
S
No.6406–2/4
2SK2530
4.0
3.5
ID -- VDS
8.0
V
V
6.0
6.0
5.5
ID -- VGS
VDS=10V
.0V
5.0V
5.0
Drain Current, I
D
– A
Drain Current, I
D
– A
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
Tc= --
25
°
C
25
°
C
75
°C
4.0V
VGS=3.5V
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Drain-to-Source Voltage, V
DS
– V
2.8
IT01567
3.2
2.8
Gate-to-Source Voltage, V
GS
– V
IT01568
RDS(on) -- VGS
Tc=25°C
ID=1A
RDS(on) -- Tc
ID=1A
VGS=10V
Static Drain-to-Source
On-State Resistance, R
DS
(on) –
Ω
2.4
Static Drain-to-Source
On-State Resistance, R
DS
(on) –
Ω
2
4
6
8
10
12
14
16
18
20
2.4
2.0
1.6
1.2
0.8
0.4
0
--60
2.0
1.6
1.2
0.8
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, V
GS
– V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
| y
fs
| - I
D
IT01569
Case Temperature, Tc – ˚C
10
7
5
IT01570
IF -- VSD
VGS=0
Forward Transfer Admittance, | yfs | – S
VDS=10V
Forward Current, I
F
– A
--
Tc=
C
25
°
25
°
C
3
2
1.0
7
5
3
2
0.1
7
5
3
2
C
75
°
0.01
0.01
0.01
Drain Current, I
D
– A
5 7 10
IT01571
1000
0
0.2
0.4
Tc=75
°
C
25
°
C
--25
°
C
0.6
0.8
1.0
1.2
1.4
1.6
Diode Forward Voltage, VSD – V
IT01572
1000
3
3
SW Time -- ID
VDD=100V
VGS=10V
Ciss, Coss, Crss -- VDS
f=1MHz
7
5
Switching Time, SW Time – ns
100
7
5
3
2
10
7
5
3
2
1.0
0.1
2
3
td(off)
tf
tr
td(on)
Ciss, Coss, Crss – pF
3
2
3
2
Ciss
100
7
5
3
2
Coss
Crss
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
IT01574
10
5
7
1.0
2
3
5
IT01573
Drain Current, I
D
– A
Drain-to-Source Voltage, V
DS
– V
No.6406–3/4
2SK2530
2
10
7
5
ASO
10µs
1.2
PD -- Ta
IDP=8A
Allowable Power Dissipation, P
D
– W
5
10
Drain Current, I
D
– A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
1m
ID=2A
DC
10
0
µ
s
1.0
s
op
ms
0.8
era
tio
n
0.6
Operation in this area
is limited by RDS(on).
0.4
0.2
0.01
Tc=25°C
Single pulse
2
3
5
0
7 10
2
3
5
7 100
2
3
0
20
40
60
80
100
120
140
160
IT01575
1.0
Drain-to-Source Voltage, V
DS
– V
Ambient Temperature, Ta – ˚C
IT01788
30
PD -- Tc
Allowable Power Dissipation, P
D
– W
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
IT01576
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2000. Specifications and information herein are
subject to change without notice.
PS No.6406–4/4
RF/Wirelessly
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