PUMB4,115 datasheet, PDF - EEWORLD Datasheet

PUMB4,115: DescriptionPNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open; CategoryDiscrete semiconductor The transistor; File Size130KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PUMB4,115 Overview

PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TSSOP
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Manufacturer packaging code	SOT363
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

DISCRETE SEMICONDUCTORS

DATA SHEET

PEMB4; PUMB4

PNP/PNP resistor-equipped

transistors; R1 = 10 kΩ, R2 = open

Product data sheet

Supersedes data of 2001 Sep 14

2003 Oct 15

	PUMB4,115	PEMB4,115
Description	PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open	PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
Brand Name	NXP Semiconduc	NXP Semiconduc
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	TSSOP	SOT
package instruction	SMALL OUTLINE, R-PDSO-G6	PLASTIC PACKAGE-6
Contacts	6	6
Manufacturer packaging code	SOT363	SOT666
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	200	200
JESD-30 code	R-PDSO-G6	R-PDSO-F6
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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