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BAS20/G,215

Description
0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size128KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BAS20/G,215 Overview

0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB

BAS20/G,215 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionPLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingTIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.2500 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage120 V
Maximum average forward current0.2000 A
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product data sheet
Supersedes data of 1999 May 26
2003 Mar 20

BAS20/G,215 Related Products

BAS20/G,215 BAS19/G,215 BAS19,235 BAS20,215 BAS20,235 BAS21,215
Description 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 200 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 250 V, SILICON, SIGNAL DIODE, TO-236AB
Number of terminals 3 3 3 3 3 3
Number of components 1 1 1 1 1 1
surface mount Yes Yes YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type SIGNAL DIODE SIGNAL DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum reverse recovery time 0.0500 us 0.0500 us 0.05 µs 0.05 µs 0.05 µs 0.05 µs
Maximum repetitive peak reverse voltage 120 V 120 V 120 V 200 V 200 V 250 V
Brand Name - - NXP Semiconductor NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? - - conform to conform to conform to conform to
Maker - - NXP NXP NXP NXP
Parts packaging code - - TO-236 TO-236 TO-236 TO-236
package instruction - - PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 R-PDSO-G3 R-PDSO-G3
Contacts - - 3 3 3 3
Manufacturer packaging code - - SOT23 SOT23 SOT23 SOT23
Reach Compliance Code - - compliant compli unknow compli
ECCN code - - EAR99 EAR99 EAR99 EAR99
Configuration - - SINGLE SINGLE SINGLE SINGLE
Maximum forward voltage (VF) - - 1.25 V 1.25 V 1.25 V 1.25 V
JEDEC-95 code - - TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code - - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code - - e3 e3 e3 e3
Maximum non-repetitive peak forward current - - 2.5 A 2.5 A 2.5 A 2.5 A
Maximum operating temperature - - 150 °C 150 °C 150 °C 150 °C
Maximum output current - - 0.2 A 0.2 A 0.2 A 0.2 A
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - - 260 260 260 260
Maximum power dissipation - - 0.25 W 0.25 W 0.25 W 0.25 W
Certification status - - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse current - - 0.1 µA 0.1 µA 0.1 µA 0.1 µA
Terminal surface - - Tin (Sn) Tin (Sn) TIN Tin (Sn)
Maximum time at peak reflow temperature - - 40 40 40 40
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