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BAS20,215

Description
0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB
CategoryDiscrete semiconductor    diode   
File Size128KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BAS20,215 Overview

0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB

BAS20,215 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionPLASTIC PACKAGE-3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current2.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product data sheet
Supersedes data of 1999 May 26
2003 Mar 20

BAS20,215 Related Products

BAS20,215 BAS19/G,215 BAS19,235 BAS20/G,215 BAS20,235 BAS21,215
Description 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 200 V, SILICON, SIGNAL DIODE, TO-236AB 0.2 A, 250 V, SILICON, SIGNAL DIODE, TO-236AB
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE SIGNAL DIODE RECTIFIER DIODE SIGNAL DIODE RECTIFIER DIODE RECTIFIER DIODE
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum repetitive peak reverse voltage 200 V 120 V 120 V 120 V 200 V 250 V
Maximum reverse recovery time 0.05 µs 0.0500 us 0.05 µs 0.0500 us 0.05 µs 0.05 µs
surface mount YES Yes YES Yes YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Brand Name NXP Semiconduc - NXP Semiconductor - NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to - conform to - conform to conform to
Maker NXP - NXP - NXP NXP
Parts packaging code TO-236 - TO-236 - TO-236 TO-236
package instruction PLASTIC PACKAGE-3 - PLASTIC PACKAGE-3 - R-PDSO-G3 R-PDSO-G3
Contacts 3 - 3 - 3 3
Manufacturer packaging code SOT23 - SOT23 - SOT23 SOT23
Reach Compliance Code compli - compliant - unknow compli
ECCN code EAR99 - EAR99 - EAR99 EAR99
Configuration SINGLE - SINGLE - SINGLE SINGLE
Maximum forward voltage (VF) 1.25 V - 1.25 V - 1.25 V 1.25 V
JEDEC-95 code TO-236AB - TO-236AB - TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 - R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 - e3 - e3 e3
Maximum non-repetitive peak forward current 2.5 A - 2.5 A - 2.5 A 2.5 A
Maximum operating temperature 150 °C - 150 °C - 150 °C 150 °C
Maximum output current 0.2 A - 0.2 A - 0.2 A 0.2 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260 - 260 260
Maximum power dissipation 0.25 W - 0.25 W - 0.25 W 0.25 W
Certification status Not Qualified - Not Qualified - Not Qualified Not Qualified
Maximum reverse current 0.1 µA - 0.1 µA - 0.1 µA 0.1 µA
Terminal surface Tin (Sn) - Tin (Sn) - TIN Tin (Sn)
Maximum time at peak reflow temperature 40 - 40 - 40 40
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