
0.2 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE
| Parameter Name | Attribute value |
| Source Url Status Check Date | 2013-06-14 00:00:00 |
| Brand Name | NXP Semiconduc |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | TSSOP |
| package instruction | PLASTIC, SC-88, 6 PIN |
| Contacts | 6 |
| Manufacturer packaging code | SOT363 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Configuration | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.715 V |
| JESD-30 code | R-PDSO-G6 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 4 |
| Number of terminals | 6 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 0.2 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Maximum power dissipation | 0.25 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 100 V |
| Maximum reverse current | 0.5 µA |
| Maximum reverse recovery time | 0.004 µs |
| Reverse test voltage | 80 V |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |

| BAV99S,135 | BAV99W/DG,115 | BAV99W/DG/B3,115 | BAV99W/G,115 | BAV99W,115 | BAV99W,135 | BAV99S/G,115 | BAV99S/DG,115 | BAV99S,115 | |
|---|---|---|---|---|---|---|---|---|---|
| Description | 0.2 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE | 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.2 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE |
| Source Url Status Check Date | 2013-06-14 00:00:00 | - | - | 2013-10-15 00:00:00 | 2013-06-14 00:00:00 | 2013-06-14 00:00:00 | - | - | 2013-06-14 00:00:00 |
| Brand Name | NXP Semiconduc | - | - | NXP Semiconduc | NXP Semiconduc | NXP Semiconduc | - | - | NXP Semiconductor |
| Is it Rohs certified? | conform to | - | - | conform to | conform to | conform to | - | - | conform to |
| Parts packaging code | TSSOP | - | - | SC-70 | SC-70 | SC-70 | - | - | TSSOP |
| Contacts | 6 | - | - | 3 | 3 | 3 | - | - | 6 |
| Manufacturer packaging code | SOT363 | - | - | SOT323 | SOT323 | SOT323 | - | - | SOT363 |
| Reach Compliance Code | compli | - | - | unknow | compli | compli | - | - | compliant |
| Diode component materials | SILICON | silicon | silicon | - | SILICON | SILICON | silicon | silicon | SILICON |
| Diode type | RECTIFIER DIODE | Signal diode | Signal diode | - | RECTIFIER DIODE | RECTIFIER DIODE | Signal diode | Signal diode | RECTIFIER DIODE |
| Number of components | 4 | 2 | 2 | - | 2 | 2 | 2 | 2 | 4 |
| Number of terminals | 6 | 3 | 3 | - | 3 | 3 | 3 | 3 | 6 |
| Maximum repetitive peak reverse voltage | 100 V | 100 V | 100 V | - | 100 V | 100 V | 100 V | 100 V | 100 V |
| Maximum reverse recovery time | 0.004 µs | 0.0040 us | 0.0040 us | - | 0.004 µs | 0.004 µs | 0.0040 us | 0.0040 us | 0.004 µs |
| surface mount | YES | Yes | Yes | - | YES | YES | Yes | Yes | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | - | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | pair | pair | - | DUAL | DUAL | pair | pair | DUAL |