DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BZB784 series
Voltage regulator double diodes
Product data sheet
Supersedes data of 2000 May 24
2001 Feb 27
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
FEATURES
•
Total power dissipation: max. 350 mW
•
Approx. 5% V
Z
tolerance
•
Working voltage range: nom. 2.4 to 15 V (E24 range).
APPLICATIONS
•
General regulation functions
•
ESD and surge protection.
DESCRIPTION
handbook, halfpage
BZB784 series
PINNING SOT323 (SC-70)
PIN
1
2
3
DESCRIPTION
cathode
cathode
common anode
3
3
1
2
Low-power voltage regulator diodes in a small SOT323
(SC-70) package.
1
Top view
2
MAM407
Fig.1 Simplified outline and symbol.
MARKING
TYPE
NUMBER
BZB784-C2V4
BZB784-C2V7
BZB784-C3V0
BZB784-C3V3
BZB784-C3V6
MARKING
CODE
91
92
93
94
95
TYPE
NUMBER
BZB784-C3V9
BZB784-C4V3
BZB784-C4V7
BZB784-C5V1
BZB784-C5V6
MARKING
CODE
96
97
98
99
9A
TYPE
NUMBER
BZB784-C6V2
BZB784-C6V8
BZB784-C7V5
BZB784-C8V2
BZB784-C9V1
MARKING
CODE
9B
9C
9D
9E
9F
TYPE
NUMBER
BZB784-C10
BZB784-C11
BZB784-C12
BZB784-C13
BZB784-C15
MARKING
CODE
9G
9H
9J
9K
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation; note 1
non-repetitive peak reverse
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
amb
= 25
°C;
prior to surge
T
amb
= 25
°C;
2 diodes loaded
T
amb
= 25
°C;
1 diode loaded
t
p
= 100
μs;
square wave;
T
amb
= 25
°C;
prior to surge
CONDITIONS
−
MIN.
see Table 1
−
−
−
−65
−
350
180
40
+150
150
mW
mW
W
°C
°C
MAX.
200
UNIT
mA
2001 Feb 27
2
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
2 diodes loaded; note 1
1 diode loaded; note 1
2 diodes loaded; note 2
1 diode loaded; note 2
Notes
1. Solder points on cathode tabs.
2. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Total BZB784-C series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZB784-C2V4
BZB784-C2V7
BZB784-C3V0
BZB784-C3V3
BZB784-C3V6
BZB784-C3V9
BZB784-C4V3
BZB784-C4V7
BZB784-C5V1
BZB784-C5V6
BZB784-C6V2
BZB784-C6V8
BZB784-C7V5
BZB784-C8V2
BZB784-C9V1
BZB784-C10
BZB784-C11
BZB784-C12
BZB784-C13
BZB784-C15
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 10.5V
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
CONDITIONS
I
F
= 10 mA; see Fig.2
0.9
BZB784 series
VALUE
140
265
355
680
UNIT
K/W
K/W
K/W
K/W
MAX.
V
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
UNIT
2001 Feb 27
3
Table 1
Per type BZB784-C2V4 to C15
T
j
= 25
°C;
unless otherwise specified.
WORKING
VOLTAGE
V
Z
(V)
at I
Z
= 5 mA
Tol.
≈5%
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Z
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
MAX.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
at I
Z
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
TEMP.
DIODE CAP.
COEFFICIENT
C
d
(pF)
S
Z
(mV/K)
at f = 1 MHz;
at I
Ztest
= 5 mA
V
R
= 0 V
(see Figs 3 and 4)
TYP.
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
2.2
3.0
3.6
4.3
5.2
6.0
6.9
7.9
8.8
10.7
MAX.
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
90
85
80
75
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
μs;
T
amb
= 25
°C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
2001 Feb 27
4
NXP Semiconductors
Voltage regulator double diodes
BZB784-C
XXX
BZB784 series
Product data sheet
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
GRAPHICAL DATA
BZB784 series
handbook, halfpage
300
MLD362
MLD363
handbook, halfpage
0.5
IF
(mA)
200
SZ
(mV/K)
0
4V7
4V3
−0.5
2V4
2V7
−1
3V9
100
3V6
−1.5
3V3
3V0
0
0.6
0.7
0.8
0.9
VF (V)
1
−2
10
−1
1
10
IZ (mA)
10
2
T
j
= 25
°C.
BZB784-C2V4 to C4V7.
T
j
= 25 to 150
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
12
MLD364
SZ
(mV/K)
8
15
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
4
0
−4
10
−1
1
10
IZ (mA)
10
2
BZB784-C5V1 to C15.
T
j
= 25 to 150
°C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2001 Feb 27
5
京公网安备 11010802033920号
EEWORLD
