BYT79X-600
Rectifier diode ultrafast
Rev. 01 — 29 October 2007
Product data sheet
1. Product profile
1.1 General description
Ultrafast, epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.
1.2 Features
I
Fast switching
I
Soft recovery characteristics
I
Low forward voltage drop
I
Low thermal resistance
I
Isolated package
I
High thermal cycling performance
1.3 Applications
I
Output rectifiers in high frequency
switched-mode power supplies
I
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
1.4 Quick reference data
I
V
RRM
≤
600 V
I
V
F
≤
1.2 V
I
I
F(AV)
≤
15 A
I
t
rr
≤
60 ns
2. Pinning information
Table 1.
Pin
1
2
mb
Pinning
Description
cathode (k)
anode (a)
mounting base; isolated
mb
k
a
001aaa020
Simplified outline
Symbol
1
2
SOD113 (2-lead TO-220F)
NXP Semiconductors
BYT79X-600
Rectifier diode ultrafast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYT79X-600
TO-220F
Description
Version
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOD113
2-lead TO-220 ‘full pack’
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
square waveform;
δ
= 1.0; T
h
≤
100
°C
square waveform;
δ
= 0.5; T
h
≤
49
°C
t = 25
µs;
square waveform;
δ
= 0.5;
T
h
≤
49
°C
t = 10 ms; sinusoidal waveform
t = 8.3 ms; sinusoidal waveform
Conditions
Min
-
-
-
-
-
-
-
−40
-
Max
600
600
600
15
30
130
143
+150
150
Unit
V
V
V
A
A
A
A
°C
°C
BYT79X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 October 2007
2 of 9
NXP Semiconductors
BYT79X-600
Rectifier diode ultrafast
5. Thermal characteristics
Table 4.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
55
Max
4.8
5.9
-
Unit
K/W
K/W
K/W
thermal resistance from junction to heatsink with heatsink compound;
see
Figure 1
without heatsink compound
R
th(j-a)
thermal resistance from junction to ambient in free air
10
Z
th(j-h)
(K/W)
1
001aaf045
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity
≤
65 %; clean and dust free
from cathode to external heatsink; f = 1 MHz
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYT79X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 October 2007
3 of 9
NXP Semiconductors
BYT79X-600
Rectifier diode ultrafast
7. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
Conditions
I
F
= 15 A; T
j
= 150
°C;
see
Figure 2
I
F
= 15 A; see
Figure 2
V
R
= 600 V
V
R
= 600 V; T
j
= 100
°C
Dynamic characteristics
Q
r
t
rr
I
RM
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
I
F
= 2 A to V
R
≥
30 V; dI
F
/dt = 20 A/µs;
see
Figure 3
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs; see
Figure 3
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100
°C;
see
Figure 3
I
F
= 10 A; dI
F
/dt = 10 A/µs;
see
Figure 4
-
-
-
40
50
3.0
70
60
5.2
nC
ns
A
Min
-
-
-
-
Typ
1.01
1.16
5
0.2
Max
1.20
1.38
50
0.8
Unit
V
V
µA
mA
Static characteristics
V
FR
-
3.2
-
V
50
I
F
(A)
40
003aab479
30
20
(1)
(2)
(3)
10
0
0
0.6
1.2
V
F
(V)
1.8
(1) T
j
= 150
°C;
typical values
(2) T
j
= 150
°C;
maximum values
(3) T
j
= 25
°C;
maximum values
Fig 2. Forward current as a function of forward voltage
BYT79X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 October 2007
4 of 9
NXP Semiconductors
BYT79X-600
Rectifier diode ultrafast
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
F
I
R
I
RM
001aab911
V
F
V
FR
time
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
30
P
tot
(W)
0.5
20
0.2
0.1
003aab477
20
P
tot
(W)
16
2.8
12
4.0
2.2
003aab478
δ
=1
a = 1.57
1.9
8
10
4
0
0
6
12
18
I
F(AV)
(A)
24
0
0
5
10
I
F(AV)
(A)
15
I
F(AV)
= I
F(RMS)
× √δ
a = form factor = I
F(RMS)
/ I
F(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYT79X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 October 2007
5 of 9
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