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2SC5415AF-TD-E

Description
RF Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size393KB,8 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC5415AF-TD-E Overview

RF Small Signal Bipolar Transistor

2SC5415AF-TD-E Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Ordering number : ENA1080A
2SC5415A
SANYO Semiconductors
DATA SHEET
2SC5415A
Features
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
High gain
:
S21e
2
=9dB typ (f=1GHz)
High cut-off frequency : fT=6.7GHz typ
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
When mounted on ceramic substrate (250mm
×0.8mm)
2
Conditions
Ratings
20
12
2
100
800
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
2SC5415AE-TD-E
2SC5415AF-TD-E
Packing Type: TD
Marking
1.0
4.0
TD
EA
RANK
1
0.4
0.5
1.5
3.0
2
3
0.4
Electrical Connection
2
0.75
1
1 : Base
2 : Collector
3 : Emitter
Bottom View
3
SANYO : PCP
http://www.sanyosemi.com/en/network/
90512 TKIM/93009AB TKIM TC-00002100 No. A1080-1/8
LOT No.
2.5

2SC5415AF-TD-E Related Products

2SC5415AF-TD-E 2SC5415AE-TD-E
Description RF Small Signal Bipolar Transistor RF Small Signal Bipolar Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1
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