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2SC6080-6

Description
Small Signal Bipolar Transistor, 0.5A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size46KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC6080-6 Overview

Small Signal Bipolar Transistor, 0.5A I(C), NPN

2SC6080-6 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
Ordering number : ENN1421B
2SA1338/2SC3392
SANYO Semiconductors
DATA SHEET
2SA1338 / 2SC6080
Features
PNP/NPN Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
Package Dimensions
unit:mm
2018B
[2SA1338/2SC3392]
0.5
0.4
0.16
0 to 0.1
· Adoption of FBET process.
· High breakdown voltage : V
CEO
=(–)50V.
· Large current capacitiy and high f
T
.
· Ultrasmall-sized package permitting sets to be small-
sized, slim.
3
1
0.95 0.95
2
1.9
2.9
0.5
1.5
2.5
( ) : 2SA1338
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
I CP
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.8
1.1
Ratings
(–)60
(–)50
(–)5
(–)500
(–)800
200
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
100*
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
* : The 2SA1338/2SC3392 are classified by 10mA h
FE
as follows :
Rank
hF
E
4
100 to 200
5
140 to 280
6
200 to 400
7
280 to 560
Continued on next page.
Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY
h
FE
rank : 4, 5, 6, 7
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 83002TN (KT)/71598HA (KT)/3197KI/1114KI, MT No.1421-1/5

2SC6080-6 Related Products

2SC6080-6 2SC6080-7 2SC6080-5 2SC6080-4
Description Small Signal Bipolar Transistor, 0.5A I(C), NPN Small Signal Bipolar Transistor, 0.5A I(C), NPN Small Signal Bipolar Transistor, 0.5A I(C), NPN Small Signal Bipolar Transistor, 0.5A I(C), NPN
Reach Compliance Code unknow unknow unknow unknow
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 200 280 140 100
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W
surface mount YES YES YES YES
Base Number Matches 1 1 1 1
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