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PSMN1R8-30PL,127

Description
N-channel 30 V, 1.8 m? logic level MOSFET in TO-220
CategoryDiscrete semiconductor    The transistor   
File Size219KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PSMN1R8-30PL,127 Overview

N-channel 30 V, 1.8 m? logic level MOSFET in TO-220

PSMN1R8-30PL,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
Contacts3
Manufacturer packaging codeSOT78
Reach Compliance Code_compli
Base Number Matches1
PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Rev. 02 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 13;
see
Figure 12
V
GS
= 4.5 V; I
D
= 25 A;
V
DS
= 15 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 100 A; V
sup
30 V;
R
GS
= 50
Ω;
unclamped
[2]
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
Typ
-
-
-
-
1.6
Max Unit
30
100
270
175
1.8
V
A
W
°C
mΩ
Static characteristics
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
-
-
22
83
-
-
nC
nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
-
-
1.1
J
[1]
[2]
Continuous current is limited by package.
Measured 3 mm from package.
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