DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLL1214-250
L-band radar LDMOS transistor
Product specification
Supersedes data of 2002 Aug 06
2003 Aug 29
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
•
L-band radar applications in the 1200 to 1400 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.
Top view
handbook, halfpage
BLL1214-250
PINNING - SOT502A
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
1
2
3
MBK394
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF
OPERATION
Pulsed class-AB;
t
p
= 1 ms;
δ
= 10%
f
(MHz)
1200 to 1400
V
DS
(V)
36
I
DQ
(mA)
150
P
L
(W)
250
G
p
(dB)
>12
η
D
(%)
>42
pulse
droop
(dB)
<0.6
t
r
(ns)
<100
t
f
(ns)
<100
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
T
h
≤
70
°C;
t
p
= 1 ms;
δ
= 10%
CONDITIONS
−
−
−
−65
−
MIN.
MAX.
75
±22
400
150
200
V
V
W
°C
°C
UNIT
2003 Aug 29
2
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
Z
th j-h
Z
th j-h
Notes
1. Thermal resistance is determined under RF operating conditions; t
p
= 100
µs, δ
= 10%.
2. Thermal resistance is determined under RF operating conditions; t
p
= 1 ms,
δ
= 10%.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
CONDITIONS
V
GS
= 0; I
D
= 3 mA
V
DS
= 10 V; I
D
= 300 mA
V
GS
= 0; V
DS
= 36 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±20
V; V
DS
= 0
V
DS
= 10 V; I
D
= 10 A
V
GS
= 9 V; I
D
= 10 A
MIN.
75
4
−
45
−
−
−
PARAMETER
thermal impedance from junction to heatsink
thermal impedance from junction to heatsink
CONDITIONS
T
h
= 25
°C,
note 1
T
h
= 25
°C,
note 2
BLL1214-250
VALUE
0.17
0.32
UNIT
K/W
K/W
TYP.
−
−
−
−
−
9
60
MAX.
−
5
1
−
1
−
−
UNIT
V
V
µA
A
µA
S
mΩ
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
Z
th mb-h
= 0.25 K/W, unless otherwise specified.
MODE OF
OPERATION
Pulsed class-AB;
t
p
= 1 ms;
δ
= 10%
f
(MHz)
1200 to 1400
V
DS
(V)
36
I
DQ
(mA)
150
P
L
(W)
250
G
p
(dB)
>12
η
D
(%)
>42
pulse
droop
(dB)
<0.6
t
r
(ns)
<100
t
f
(ns)
<100
Ruggedness in class-AB operation
The BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under
the following conditions: V
DS
= 36 V; frequency from 1200 MHz to 1400 MHz at rated load power.
Typical impedance
FREQUENCY
(GHZ)
1.20
1.25
1.30
1.35
1.40
Z
S
(Ω)
1.3
−
j 2.8
1.9
−
j 2.9
4.6
−
j 2.9
5.7
−
j 0.3
2.7
−
j 1.8
Z
L
(Ω)
1.1
−
j 0.9
1.0
−
j 0.5
0.8
−
j 0.2
0.7
−
j 0.3
0.6
−
j 0.4
2003 Aug 29
3
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
BLL1214-250
handbook, halfpage
300
MLD858
handbook, halfpage
300
PL
MLD859
PL
(W)
200
(W)
200
(3)
(3)
(2)
100
(1)
100
(1)
(2)
0
0
4
8
12
Pi (W)
16
0
0
4
8
12
Pi (W)
16
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
t
p
= 1 ms;
δ
= 10%.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
t
p
= 100
µs; δ
= 10%.
(3) f = 1.4 GHz.
Fig.2
Load power as function of input power;
typical values.
Fig.3
Load power as function of input power;
typical values.
handbook, halfpage
16
MLD860
Gp
(dB)
(2)
(3)
handbook, halfpage
16
MLD861
Gp
(dB)
12
(2)
(3)
(1)
(1)
12
8
8
4
4
0
0
100
200
PL (W)
300
0
0
100
200
PL (W)
300
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
t
p
= 1 ms;
δ
= 10%.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
t
p
= 100
µs; δ
= 10%.
(3) f = 1.4 GHz.
Fig.4
Power gain as function of load power;
typical values.
Fig.5
Power gain as function of load power;
typical values.
2003 Aug 29
4
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
BLL1214-250
handbook, halfpage
(1)
60
MLD862
handbook, halfpage
60
MLD863
η
D
(%)
40
(2)
(3)
η
D
(%)
40
(1)
(2)
(3)
20
20
0
0
100
200
PL (W)
300
0
0
100
200
PL (W)
300
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
t
p
= 1 ms;
δ
= 10%.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
t
p
= 100
µs; δ
= 10%.
(3) f = 1.4 GHz.
Fig.6
Efficiency as function of load power;
typical values.
Fig.7
Efficiency as function of load power;
typical values.
handbook, halfpage
15
Gp
MLD864
60
η
D
(%)
50
handbook, halfpage
15
Gp
MLD865
60
η
D
(%)
50
(dB)
14
η
D
Gp
(dB)
14
Gp
η
D
13
40
13
40
12
30
12
30
11
20
11
20
10
1.15
1.25
1.35
f (GHz)
10
1.45
10
1.15
1.25
1.35
f (GHz)
10
1.45
t
p
= 1 ms;
δ
= 10%.
t
p
= 100
µs; δ
= 10%.
Fig.8
Power gain and drain efficiency as functions
of frequency; typical values.
Fig.9
Power gain and drain efficiency as functions
of frequency; typical values.
2003 Aug 29
5
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